公开(公告)号：NL1024332A1

公开(公告)日：2004-04-02

申请号：NL1024332

申请日：2003-09-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  MATHUNI JOSEF ,  FAGERER OLIVER ,  SCHIESSL BETTINA ,  RAHN STEPHEN

IPC: B32B15/00 ,  G03F1/00

公开(公告)号：DE10245159B4

公开(公告)日：2006-10-12

申请号：DE10245159

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  MATHUNI JOSEF ,  FAGERER OLIVER ,  SCHIESSL BETTINA ,  RAHN STEPHEN

IPC: B32B15/00 ,  G03F1/00

Abstract: A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.

公开(公告)号：DE10245159A1

公开(公告)日：2004-04-15

申请号：DE10245159

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  MATHUNI JOSEF ,  FAGERER OLIVER ,  SCHIESSL BETTINA ,  RAHN STEPHEN

IPC: B32B15/00 ,  G03F1/00 ,  G03F1/14

Abstract: A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.