公开(公告)号：DE10206188A1

公开(公告)日：2002-09-26

申请号：DE10206188

申请日：2002-02-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NOELSCHER CHRISTOPH ,  KNOBLOCH JUERGEN ,  MATHUNI JOSEF

IPC: G03F1/00 ,  G03F1/14

Abstract: An irradiation sensitive layer formed on a mask layer of a carrier (1), is removed to form an exposure structure, after which the exposure structure is removed. Another irradiation sensitive layer is developed on the carrier to form an exposure structure (5) having two regions (6,7) with varying thickness. The carrier is etched to different etching depths with respect to thickness of the exposure structure covering the carrier.

公开(公告)号：DE10062014B4

公开(公告)日：2006-03-09

申请号：DE10062014

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MATSCHITSCH MARTIN ,  MATHUNI JOSEF

IPC: H01L21/301 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/78

公开(公告)号：DE10339888A1

公开(公告)日：2005-03-31

申请号：DE10339888

申请日：2003-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KAMM FRANZ-MICHAEL ,  MATHUNI JOSEF

IPC: G03F1/26 ,  G03F1/58 ,  G03F7/04 ,  G03F7/085 ,  G03F7/09 ,  G03F1/08

Abstract: The absorbent layer has various regions. The region near the substrate has a greater etching rate than that lying above it. Of several layers, an absorbent layer includes chromium. One of the layers is anti-reflective and contains CrOx. A dry etching process is used, in an oxygen-containing plasma. An independent claim is included for the corresponding method.

公开(公告)号：DE10100822A1

公开(公告)日：2002-07-18

申请号：DE10100822

申请日：2001-01-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MATHUNI JOSEF ,  RUHL GUENTHER

IPC: G03F1/00 ,  C23F4/00 ,  G03F7/00

Abstract: Plasma etching process comprises etching a pattern in a MoSi(ON) layer using a chlorine compound. Preferred Features: An inert gas is added to the chlorine compound. The inert gas is helium, argon or nitrogen. Polymer-containing CH4 is added to the chlorine compound. O2 is added to the chlorine compound in small amounts.

公开(公告)号：DE10062014A1

公开(公告)日：2002-07-04

申请号：DE10062014

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MATSCHITSCH MARTIN ,  MATHUNI JOSEF

IPC: H01L21/301 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/78

Abstract: A process for thinning selected regions of thin discs (1) having a base thickness comprises forming and etch-resistant layer (2) onto cross-stay regions (3) of an upper face, etching away uncovered regions (4) to a given final thickness less than the base thickness while the cross stays and connected sidewalls remain.

公开(公告)号：DE10114861B4

公开(公告)日：2004-02-26

申请号：DE10114861

申请日：2001-03-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MATHUNI JOSEF ,  RUHL GUENTHER

IPC: G03F1/00 ,  G03F7/20 ,  G03F7/42 ,  H01L21/00 ,  G03F7/26

公开(公告)号：DE10204222A1

公开(公告)日：2003-11-13

申请号：DE10204222

申请日：2002-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MATHUNI JOSEF ,  RUHL GUENTHER

IPC: C23F4/00 ,  G03F1/80 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/461

Abstract: A process enables plasma etching of materials that do not contain silicon. The process is particularly suitable for the side wall passivation of chromium layers in masks for fabricating semiconductor components. The plasma contains oxygen and/or nitrogen, and at least one silicon-donating compound is introduced into the plasma. This allows efficient passivation of side walls.

公开(公告)号：DE10245159B4

公开(公告)日：2006-10-12

申请号：DE10245159

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  MATHUNI JOSEF ,  FAGERER OLIVER ,  SCHIESSL BETTINA ,  RAHN STEPHEN

IPC: B32B15/00 ,  G03F1/00

Abstract: A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.

公开(公告)号：DE10204222B4

公开(公告)日：2005-12-01

申请号：DE10204222

申请日：2002-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MATHUNI JOSEF ,  RUHL GUENTHER

IPC: C23F4/00 ,  G03F1/80 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/461

Abstract: A process enables plasma etching of materials that do not contain silicon. The process is particularly suitable for the side wall passivation of chromium layers in masks for fabricating semiconductor components. The plasma contains oxygen and/or nitrogen, and at least one silicon-donating compound is introduced into the plasma. This allows efficient passivation of side walls.

公开(公告)号：DE10245159A1

公开(公告)日：2004-04-15

申请号：DE10245159

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  MATHUNI JOSEF ,  FAGERER OLIVER ,  SCHIESSL BETTINA ,  RAHN STEPHEN

IPC: B32B15/00 ,  G03F1/00 ,  G03F1/14

Abstract: A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.