公开(公告)号：DE10360536B4

公开(公告)日：2006-12-21

申请号：DE10360536

申请日：2003-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  FRANGEN ANDREAS

IPC: G01M11/00 ,  G01M11/08

公开(公告)号：DE10360536A1

公开(公告)日：2005-05-12

申请号：DE10360536

申请日：2003-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  FRANGEN ANDREAS

IPC: G01M11/00 ,  G01M11/08

Abstract: A semiconductor wafer processing mask set mask (6, 8) inspection procedure overlays and compares registered structure patterns (16, 18) in successive images (30, 31) of different masks to give a combined image (33) and compares it with reference image (35) of the required resist pattern for defect classification. Independent claims are included for equipment using the procedure.

公开(公告)号：DE10352639B4

公开(公告)日：2007-03-01

申请号：DE10352639

申请日：2003-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANGEN ANDREAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  EGGERS KARIN ,  JAEHNERT CARMEN

IPC: G03F7/20 ,  G01B5/28 ,  G01B5/30 ,  G01N21/956 ,  G03F1/00

Abstract: The method of dynamically monitoring a reticle includes preventively macro monitoring and defect inspecting with regard to mechanical loading, including particle deposits or electrostatically induced damage, and energy load, including the associated changes to the reticle material and surface characteristics. Different surface distributions of the absorber layer as well as characteristics of the exposure system, such as N 2 purging of the projection lens/reticle area in order to reduce contamination and recrystallization on optically active surfaces are considered.

公开(公告)号：DE10352639A1

公开(公告)日：2005-06-23

申请号：DE10352639

申请日：2003-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANGEN ANDREAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  EGGERS KARIN ,  JAEHNERT CARMEN

IPC: G01B5/28 ,  G01B5/30 ,  G01N21/956 ,  G03F1/00 ,  G03F7/20

Abstract: The method of dynamically monitoring a reticle includes preventively macro monitoring and defect inspecting with regard to mechanical loading, including particle deposits or electrostatically induced damage, and energy load, including the associated changes to the reticle material and surface characteristics. Different surface distributions of the absorber layer as well as characteristics of the exposure system, such as N 2 purging of the projection lens/reticle area in order to reduce contamination and recrystallization on optically active surfaces are considered.