公开(公告)号：WO03025678A3

公开(公告)日：2003-10-09

申请号：PCT/DE0203196

申请日：2002-08-28

Applicant: INFINEON TECHNOLOGIES AG ,  ALBRECHT THOMAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  JAEHNERT CARMEN ,  KRONEFELD OLAF ,  STIEGLER MANFRED

Inventor： ALBRECHT THOMAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  JAEHNERT CARMEN ,  KRONEFELD OLAF ,  STIEGLER MANFRED

IPC: G03F1/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/84 ,  G03F7/70525 ,  G03F7/70541 ,  G03F7/70741

Abstract: The invention relates to a method and a device for control of the data flow on application of reticles in a semiconductor component production, characterised in that the reticles each have a unique structured reticle data set, whereby the content of the reticle data set can be automatically altered and/or completed, depending on the production process for a semiconductor component. The application of reticles in a semiconductor component production can thus be efficiently controlled.

Abstract translation: 本发明涉及一种方法，以及用于控制在在半导体器件生产中使用的标线的数据的流动的设备，其特征在于，所述标线清楚地结构化的标线片被分配，其中，所述掩模版的响应的内容的半导体器件的制造工序中 自动改变和/或补充。 因此，使用分划板可以有效地控制在一个半导体器件的制造。

公开(公告)号：DE102004014482B4

公开(公告)日：2007-05-03

申请号：DE102004014482

申请日：2004-03-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  MAREK PETER ,  HAY BERND ,  DOEHR NINA ,  KATZWINKEL FRANK ,  JAEHNERT CARMEN

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

Abstract: Tolerances to be communicated to the manufacturer for a photomask fabrication process that are assigned as desired values of feature sizes to be realized on the photomask, are freed of restrictions by predefining, for a first feature size, a first desired value and a first tolerance assigned to the first desired value. The real discrepancy between the first feature size and the first desired value is taken into account when predefining desired values assigned to the further feature sizes to be provided on the photomask. As a result, a value which corresponds to a first approximation to the permitted feature size tolerance on the semiconductor wafer is provided for the tolerances of the desired values.

公开(公告)号：DE10143711A1

公开(公告)日：2003-06-26

申请号：DE10143711

申请日：2001-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAASE NORBERT ,  KRONEFELD OLAF ,  JAEHNERT CARMEN ,  HAFFNER HENNIG ,  ALBRECHT THOMAS ,  STIEGLER MANFRED

IPC: G03F1/00 ,  G03F7/20 ,  H01L21/027

Abstract: A reticle control system and method in which each reticle is unambiguously assigned a structured reticle data set, and the content of each reticle data set is automatically changed and/or supplemented depending on use of the associated reticle in the semiconductor component production process for which the reticle was produced. The reticle data set is used to identify and control the reticles over the entire production sequence. The ability to change or supplement the reticle data sets facilitates progressively storing production-dictated information related to the use of the associated reticles, thereby enabling effective control of the reticles in the production process.

公开(公告)号：DE10352639B4

公开(公告)日：2007-03-01

申请号：DE10352639

申请日：2003-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANGEN ANDREAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  EGGERS KARIN ,  JAEHNERT CARMEN

IPC: G03F7/20 ,  G01B5/28 ,  G01B5/30 ,  G01N21/956 ,  G03F1/00

Abstract: The method of dynamically monitoring a reticle includes preventively macro monitoring and defect inspecting with regard to mechanical loading, including particle deposits or electrostatically induced damage, and energy load, including the associated changes to the reticle material and surface characteristics. Different surface distributions of the absorber layer as well as characteristics of the exposure system, such as N 2 purging of the projection lens/reticle area in order to reduce contamination and recrystallization on optically active surfaces are considered.

公开(公告)号：DE102004014482A1

公开(公告)日：2005-10-13

申请号：DE102004014482

申请日：2004-03-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  MAREK PETER ,  HAY BERND ,  DOEHR NINA ,  KATZWINKEL FRANK ,  JAEHNERT CARMEN

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

Abstract: Tolerances to be communicated to the manufacturer for a photomask fabrication process that are assigned as desired values of feature sizes to be realized on the photomask, are freed of restrictions by predefining, for a first feature size, a first desired value and a first tolerance assigned to the first desired value. The real discrepancy between the first feature size and the first desired value is taken into account when predefining desired values assigned to the further feature sizes to be provided on the photomask. As a result, a value which corresponds to a first approximation to the permitted feature size tolerance on the semiconductor wafer is provided for the tolerances of the desired values.

公开(公告)号：DE10352639A1

公开(公告)日：2005-06-23

申请号：DE10352639

申请日：2003-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANGEN ANDREAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  EGGERS KARIN ,  JAEHNERT CARMEN

IPC: G01B5/28 ,  G01B5/30 ,  G01N21/956 ,  G03F1/00 ,  G03F7/20

Abstract: The method of dynamically monitoring a reticle includes preventively macro monitoring and defect inspecting with regard to mechanical loading, including particle deposits or electrostatically induced damage, and energy load, including the associated changes to the reticle material and surface characteristics. Different surface distributions of the absorber layer as well as characteristics of the exposure system, such as N 2 purging of the projection lens/reticle area in order to reduce contamination and recrystallization on optically active surfaces are considered.