公开(公告)号：DE10344275B4

公开(公告)日：2006-04-27

申请号：DE10344275

申请日：2003-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINMETZ JOHANN ,  GENZ OLIVER ,  FRIEDRICH STEFFEN

IPC: H01L21/31 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/312 ,  H01L21/66 ,  H01L21/768

公开(公告)号：DE10344275A1

公开(公告)日：2005-05-04

申请号：DE10344275

申请日：2003-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINMETZ JOHANN ,  GENZ OLIVER ,  FRIEDRICH STEFFEN

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/66 ,  H01L21/768 ,  H01L21/31 ,  G03F7/20 ,  G03F7/30 ,  H01L21/3105 ,  H01L21/312

Abstract: Semiconductor structure comprises an anti-reflective coating layer (11') to prevent reflections on a substrate (10) being structured, and a structured photolacquer layer (12) arranged on the anti-reflective coating layer. The anti-reflective coating layer or an additional layer lying between the anti-reflective coating layer and the substrate has a predetermined material for controlling a plasma etching step. An independent claim is also included for a process for the production of a semiconductor structure.