公开(公告)号：DE10344275B4

公开(公告)日：2006-04-27

申请号：DE10344275

申请日：2003-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINMETZ JOHANN ,  GENZ OLIVER ,  FRIEDRICH STEFFEN

IPC: H01L21/31 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/312 ,  H01L21/66 ,  H01L21/768

公开(公告)号：DE10344275A1

公开(公告)日：2005-05-04

申请号：DE10344275

申请日：2003-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINMETZ JOHANN ,  GENZ OLIVER ,  FRIEDRICH STEFFEN

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/66 ,  H01L21/768 ,  H01L21/31 ,  G03F7/20 ,  G03F7/30 ,  H01L21/3105 ,  H01L21/312

Abstract: Semiconductor structure comprises an anti-reflective coating layer (11') to prevent reflections on a substrate (10) being structured, and a structured photolacquer layer (12) arranged on the anti-reflective coating layer. The anti-reflective coating layer or an additional layer lying between the anti-reflective coating layer and the substrate has a predetermined material for controlling a plasma etching step. An independent claim is also included for a process for the production of a semiconductor structure.

公开(公告)号：DE102005009553B3

公开(公告)日：2006-06-08

申请号：DE102005009553

申请日：2005-03-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHELER ULRICH ,  STEINMETZ JOHANN ,  WEGE STEPHAN ,  SESTERHENN MICHAEL

IPC: H01L21/8242 ,  G11C11/34

Abstract: Forming a trough capacitor buried plate in storage cell fields on a semiconductor wafer, comprises preparing the wafer (10), etching a trough (12) for each storage cell (20) in each field on the front of the wafer, and precipitating a layer containing a dopant on the wafer. A resist layer (64) is applied to the front of the wafer, and is exposed to a light source to which it is sensitive. The storage fields are successively exposed, and the resist layer is then developed to form a mask. The structure elements are made deeper, afterwhich the exposed doped layer is removed followed by the remaining resist mask.

公开(公告)号：DE10255845B3

公开(公告)日：2004-07-15

申请号：DE10255845

申请日：2002-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： POPP MARTIN ,  SCHLOESSER TILL ,  LUETZEN JOERN ,  KUDELKA STEPHAN ,  MOLL HANS-PETER ,  HEINECK LARS ,  STEINMETZ JOHANN

IPC: H01L21/20 ,  H01L21/334 ,  H01L21/425 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/94

Abstract: Production of a trench capacitor comprises forming a trench (5) in a substrate (1) using a hard mask (2, 3), forming a capacitor dielectric (30), an insulating collar (10) and an electrically conducting filler (20, 40) in the upper and lower trench regions, forming a liner on the hard mask and in the trench, implanting impurity ions into the trench using the hard mask, forming a liner mask to define a contact region and an insulating region of the trench contact, and completing the connecting region (KS) and the insulating region of the trench contact by removing and replacing a part of the filler and/or a part of the collar using the liner mask.