公开(公告)号：WO2004025714A3

公开(公告)日：2004-05-13

申请号：PCT/EP0309551

申请日：2003-08-28

Applicant: INFINEON TECHNOLOGIES AG ,  GENZ OLIVER ,  KIRCHHOFF MARKUS ,  MACHILL STEFAN ,  REB ALEXANDER ,  SCHMIDT BARBARA ,  STAVREV MOMTCHIL ,  STEGEMANN MAIK ,  WEGE STEPHAN

Inventor： GENZ OLIVER ,  KIRCHHOFF MARKUS ,  MACHILL STEFAN ,  REB ALEXANDER ,  SCHMIDT BARBARA ,  STAVREV MOMTCHIL ,  STEGEMANN MAIK ,  WEGE STEPHAN

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8244

CPC classification number: H01L21/76811 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144

Abstract: The invention relates to a method for production of a semiconductor structure, comprising the steps: preparation of a semiconductor substrate (1), generation of a lower first, a middle second and an upper third masking layer (5, 7, 9) on a surface of the semiconductor substrate (1), formation of at least one first window (11, 11a-h) in the upper third masking layer (9), structuring the middle second masking layer (7) using the first window (11, 11a-h) in the upper third masking layer (9) for the transfer of the first window (11, 11a-h), structuring the lower first masking layer (5) using the first window (11, 11a-h) in the middle second masking layer (7) for the transfer of the first window (11, 11a-h), enlarging the first window (11, 11a-h) in the upper third masking layer (9) to form a second window (13, 13a-b) in a maskless process step, restructuring the middle second masking layer (7) using the second window (13, 13a-b) in the upper third masking layer (9) for the transfer of the second window (13, 13a-b), structuring the semiconductor substrate (1), using the structured lower third masking layer (5), restructuring the lower first masking layer (5) using the second window (13, 13a-b) in the middle second masking layer (7) and restructuring the semiconductor substrate (1) using the restructured lower third masking layer (5).

Abstract translation: 本发明提供了一种半导体结构制造方法，包括以下步骤：提供半导体衬底（1）; 在所述半导体衬底（1）的表面上提供下第一掩膜层，中间第二掩膜层和上第三掩膜层（5,7,9）; 在所述上部第三掩模层（9）中形成至少第一窗口（11,11a-h）; 使用上部第三掩模层（9）中的第一窗口（11,11a-h）图案化中间第二掩模层（7）以传递第一窗口（11,11a-h）; 使用中间第二掩模层（7）中的第一窗口（11,11a-h）构造下部第一掩模层（5）以传送第一窗口（11,11a-h）; 扩大上部第三掩模层（9）中的第一窗口（11,11a-h）以在无掩模工艺步骤中形成第二窗口（13,13a-b）; 使用上部第三掩模层（9）中的第二窗口（13,13a-b）重构中央第二掩模层（7）以传送第二窗口（13,13a-b）; 使用图案化的下第三掩模层（5）图案化半导体衬底（1）; 使用中间第二掩模层（7）中的第二窗口（13,13a-b）重构下部第一掩模层（5）; 以及使用重构的下第三掩模层（5）重构半导体衬底（1）。

公开(公告)号：DE10344275B4

公开(公告)日：2006-04-27

申请号：DE10344275

申请日：2003-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINMETZ JOHANN ,  GENZ OLIVER ,  FRIEDRICH STEFFEN

IPC: H01L21/31 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/312 ,  H01L21/66 ,  H01L21/768

公开(公告)号：DE10301291B3

公开(公告)日：2004-08-26

申请号：DE10301291

申请日：2003-01-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAIER ULRICH ,  GENZ OLIVER

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/28

Abstract: Inserting structures into a substrate (4) comprises applying a photosensitive layer (1) on an uppermost layer, forming structures on the photosensitive layer by lithography, etching the photosensitive layer, transferring the structure produced by the photosensitive layer into a layer (2) of a layer stack, and etching a layer (3) in the layer stack.

公开(公告)号：DE102004022016B4

公开(公告)日：2006-04-20

申请号：DE102004022016

申请日：2004-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOELLER HOLGER ,  GENZ OLIVER

IPC: G03F7/38

Abstract: A process for forming a pattern in a layer on a semiconductor substrate (1) comprises applying a photo sensitive resist to the substrate, exposing primary and secondary sections of the resist, and heating the exposed resist. One section of the resist is heated to a first temperature and the other section is heated to a second temperature. The heated resist is then developed and the substrate is etched to transfer the openings and remove the developed resist.

公开(公告)号：DE102004022016A1

公开(公告)日：2005-12-08

申请号：DE102004022016

申请日：2004-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOELLER HOLGER ,  GENZ OLIVER

IPC: G03F7/38

Abstract: A process for forming a pattern in a layer on a semiconductor substrate (1) comprises applying a photo sensitive resist to the substrate, exposing primary and secondary sections of the resist, and heating the exposed resist. One section of the resist is heated to a first temperature and the other section is heated to a second temperature. The heated resist is then developed and the substrate is etched to transfer the openings and remove the developed resist.

公开(公告)号：DE10341322A1

公开(公告)日：2004-05-19

申请号：DE10341322

申请日：2003-09-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GENZ OLIVER ,  MICHAELIS ALEXANDER ,  MANTZ ULRICH

IPC: G01B11/02 ,  G01N21/21 ,  G01J4/00 ,  G02B11/00 ,  G01B11/24 ,  H01L21/66

Abstract: An apparatus and method for measuring feature sizes having form birefringence. The method includes providing a surface having surface features thereon; radiating the surface features with light having a first wavelength and a first polarization; measuring a reflected polarization of light having the first wavelength reflected from the surface features; rotating the surface features by rotating the surface to measure the reflected polarization of the reflected light having the first wavelength at least one new rotated position; radiating the surface features with light having a second wavelength and the first polarization; measuring a reflected polarization of light having the second wavelength reflected from the surface features; rotating the surface features by rotating the surface to measure the reflected polarization of the reflected light having the second wavelength at least one new rotated position; and correlating the reflected polarization from the light having the first and second polarizations to surface feature sizes.

公开(公告)号：DE102005040288B3

公开(公告)日：2007-02-15

申请号：DE102005040288

申请日：2005-08-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GENZ OLIVER

IPC: H01L21/306 ,  H01L21/8242

Abstract: Lowering the desorption of hydrogen bromide (HBr) during the manufacture of a semiconductor component, comprises exposing an HBr-loaded work piece and/or an etching chamber (10) loaded with HBr to a water-vapor stream for the targeted formation of HBr-hydrate crystals. The work piece loaded with HBr is a silicon wafer.

公开(公告)号：DE10358025A1

公开(公告)日：2005-07-21

申请号：DE10358025

申请日：2003-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GENZ OLIVER

IPC: C23F1/12 ,  H01L21/3213

Abstract: A process for etching tungsten, comprises using a gas mixture that contains NF3, HBr and O2. The etching is anisotropic, and the mixture contains an inert gas. Etching takes place at 30-70o>C.

公开(公告)号：DE10344275A1

公开(公告)日：2005-05-04

申请号：DE10344275

申请日：2003-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINMETZ JOHANN ,  GENZ OLIVER ,  FRIEDRICH STEFFEN

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/66 ,  H01L21/768 ,  H01L21/31 ,  G03F7/20 ,  G03F7/30 ,  H01L21/3105 ,  H01L21/312

Abstract: Semiconductor structure comprises an anti-reflective coating layer (11') to prevent reflections on a substrate (10) being structured, and a structured photolacquer layer (12) arranged on the anti-reflective coating layer. The anti-reflective coating layer or an additional layer lying between the anti-reflective coating layer and the substrate has a predetermined material for controlling a plasma etching step. An independent claim is also included for a process for the production of a semiconductor structure.

公开(公告)号：DE50312208D1

公开(公告)日：2010-01-21

申请号：DE50312208

申请日：2003-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GENZ OLIVER ,  KIRCHHOFF MARKUS ,  MACHILL STEFAN ,  REB ALEXANDER ,  SCHMIDT BARBARA ,  STAVREV MOMTCHIL ,  STEGEMANN MAIK ,  WEGE STEPHAN

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8244

Abstract: Production of a semiconductor structure comprises preparing a semiconductor substrate, providing a lower first, a middle second and an upper third mask layer (5,7,9) on a surface of the substrate, forming a first window (11) in the third mask layer, structuring the second mask layer using the window, structuring the first mask layer using the window, enlarging the window in the third mask layer to form a second window (13), restructuring the second mask layer using the second window, structuring the substrate using the structured third mask layer, restructuring the first mask layer using the second window, and restructuring the substrate using the third mask layer.