公开(公告)号：DE102006034776B3

公开(公告)日：2008-03-06

申请号：DE102006034776

申请日：2006-07-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANTZ ULRICH ,  GEILER THOMAS ,  REINIG PETER

IPC: G01J4/00 ,  G01N21/21

Abstract: The method involves providing a semi-conductor wafer (5) that has a sample (14) of structural elements (16), which is periodically arranged partly on a main surface (10) along a symmetrical axis. An ellipsometer providing with a radiation source (30), a detector (50), a rotating polarizer (40). A direction (32) is selected in the case of an irradiation cross polarization appears. The irradiation depends on the determination of ellipsometric parameters from the reflected electromagnetic radiation by the detector, and calculation of the parameters of the structural elements. An independent claim is also includes for a measuring device for the regulation of parameters of structural elements of a sample on a semiconductor wafer, which has a semiconductor wafer covered on a major face along a symmetry axis.

公开(公告)号：DE102006017283A1

公开(公告)日：2007-10-18

申请号：DE102006017283

申请日：2006-04-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GEILER THOMAS ,  REINIG PETER ,  BLOESS HARALD ,  MOERT MANFRED

IPC: G01B11/24 ,  G01B11/06 ,  G01B11/14 ,  H01L21/66

Abstract: The method involves determining complex reflection coefficients of reflected monochromatic electromagnetic radiation by a detector (50). Ellipsometry parameters are determined from the complex reflection coefficient. A model of an ellipsometry irradiation is provided, where the model combines the ellipsometry parameters with modeled measurements of structural units (14). Measurements of the structural units on a semiconductor wafer (5) are calculated based on the model. An independent claim is also included for a measuring device for measuring structural units of a pattern on a semiconductor wafer.