-
公开(公告)号：DE102004028851A1
公开(公告)日：2005-10-20
申请号：DE102004028851
申请日：2004-06-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BLOESS HARALD , WELLHAUSEN UWE , REINIG PETER , WEIDNER PETER , GUITTET PIERRE-YVES , MANTZ ULRICH
Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.
-
公开(公告)号：DE102004004406A1
公开(公告)日：2005-08-25
申请号：DE102004004406
申请日：2004-01-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor： WEIDNER PETER , MANTZ ULRICH , GUITTET PIERRE-YVES , BLOESS HARALD
IPC: G01F17/00 , G01G9/00 , H01L21/306 , H01L21/66 , H01L21/8242
Abstract: Determining the volume of an etched structure in a semiconductor substrate, comprises weighing the substrate, etching the substrate by targeted material removal, and weighing the substrate. The volume of the etched structure is calculated by taking into account the weight loss and the material density.
-
公开(公告)号：DE102004049518B3
公开(公告)日：2006-02-02
申请号：DE102004049518
申请日：2004-10-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BLOESS HARALD , MANTZ ULRICH
IPC: H01L21/66
-
公开(公告)号：DE10356519A1
公开(公告)日：2005-07-07
申请号：DE10356519
申请日：2003-12-03
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GUITTET PIERRE-YVES , MANTZ ULRICH , THIEME PETER , DRUMMER HEIKE
Abstract: A process to determine a geometric shape on the surface of a semiconductor layer, as for integrated circuits, comprises irradiating the layer with radiation of a wavelength at which the layer is transparent, measuring the reflection or transmission from the layer and determining the position of the shape from the image received. An independent claim is also included for an optical system for the above process.
-
公开(公告)号：DE10346850B4
公开(公告)日：2005-12-15
申请号：DE10346850
申请日：2003-10-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor： MANTZ ULRICH , WEIDNER PETER , WIENHOLD RALPH , GUITTET PIERRE-YVES
Abstract: The method involves applying electromagnetic scanning radiation to the layer with the recess, with a wavelength larger than the lateral dimension of the recess. The response radiation is received and the interaction of the radiation with the layer is used to determine characteristic data for derivation of the dimensions or volume of the recess and the properties of material in the recess. An independent claim is included for a method of manufacturing a component with a recess.
-
Patent Agency Ranking
公开(公告)号：DE10333119B3
公开(公告)日：2005-05-25
申请号：DE10333119
申请日：2003-07-21
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GUITTET PIERRE-YVES , MANTZ ULRICH , MARX ECKHARD
-
公开(公告)号：DE10355256A1
公开(公告)日：2005-04-14
申请号：DE10355256
申请日：2003-11-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor： MANTZ ULRICH , GENZ OLIVER
IPC: G01N21/21 , G01N21/95 , G01N21/956 , H01L23/544 , H01L21/66
Abstract: Method for determining the quality of the surface of a structure mounted on a support has the following steps: irradiation of an area of the structure with electromagnetic radiation with a given orientation; determination of a value of a characteristic parameter of the reflected radiation; comparison of the determined value with an expectation value of the characteristic parameter, whereby the difference between determined and expected values is a measure of the quality of the surface structure. The invention also relates to a corresponding device.
-
公开(公告)号：DE102006034776B3
公开(公告)日：2008-03-06
申请号：DE102006034776
申请日：2006-07-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： MANTZ ULRICH , GEILER THOMAS , REINIG PETER
Abstract: The method involves providing a semi-conductor wafer (5) that has a sample (14) of structural elements (16), which is periodically arranged partly on a main surface (10) along a symmetrical axis. An ellipsometer providing with a radiation source (30), a detector (50), a rotating polarizer (40). A direction (32) is selected in the case of an irradiation cross polarization appears. The irradiation depends on the determination of ellipsometric parameters from the reflected electromagnetic radiation by the detector, and calculation of the parameters of the structural elements. An independent claim is also includes for a measuring device for the regulation of parameters of structural elements of a sample on a semiconductor wafer, which has a semiconductor wafer covered on a major face along a symmetry axis.
-
公开(公告)号：DE102004001411B4
公开(公告)日：2006-05-11
申请号：DE102004001411
申请日：2004-01-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor： MANTZ ULRICH
IPC: G01N21/956 , G01N21/21 , G06T7/00 , H01L21/66
-
公开(公告)号：DE102004009095A1
公开(公告)日：2005-09-29
申请号：DE102004009095
申请日：2004-02-25
Applicant: INFINEON TECHNOLOGIES AG
Inventor： MANTZ ULRICH , GUITTET PIERRE-YVES
Abstract: Mask layer`s structure superimposition accuracy determination method involves scanning a rear side of a semiconductor substrate (10) and a mask layer (14) using electromagnetic radiations. The radiations reflected from the substrate and layer are absorbed. Images of the absorbed radiation are evaluated to find positions of alignment marks on the substrate and layer. The accuracy of superimposition of a mask structure in the layer is determined based on the positions. An independent claim is also included for an optical system for determining the accuracy of superimposition of a structure in a mask layer on a semiconductor layer.
-
-
-
-
-
-
-
-
-
Search Results
21
records
(took 0.025 seconds)
