Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"GORDON ROY" Page 1

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发明专利
Electrically programmable non-volatile memory based on threshold-changing MOSFETs comprises charge-storing layer made from hafnium oxynitride compound 未知

公开(公告)号：DE10344039A1

公开(公告)日：2005-04-14

申请号：DE10344039

申请日：2003-09-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REISINGER HANS , GUTSCHE MARTIN , SEIDL HARALD , GORDON ROY

IPC: H01L21/28 , H01L27/115 , H01L29/51 , H01L29/792

Abstract: An electrically programmable non-volatile memory based on threshold-changing MOSFETs comprises a charge-storing layer made from a compound of the formula: HfO xN y. An independent claim is also included for the production of an electrically programmable non-volatile memory based on threshold-changing MOSFETs.

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