公开(公告)号：DE102006015132A1

公开(公告)日：2007-10-11

申请号：DE102006015132

申请日：2006-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWETLICK WERNER ,  HARTNER WALTER ,  GOTTINGER REINHARD ,  BONART DIETRICH

IPC: H01L29/40 ,  H01L21/74

Abstract: The structure has an electrically insulated deep trench isolation (4) with a semiconductor substrate, and a single-crystal semiconductor layer that is arranged at the semiconductor substrate and a heavily doped buried layer (3). A set of low impedance contacts varies from a surface of the semiconductor layer till the buried layer is in the form of diffusion areas such as decreaser-contact. The deep trench isolation has a meander-shaped course formed in control of bays (8), such that one of the diffusion areas is arranged in one of the bays. An independent claim is also included for a method for manufacturing a semiconductor structure.

公开(公告)号：DE102006015131B4

公开(公告)日：2007-12-27

申请号：DE102006015131

申请日：2006-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWETLICK WERNER ,  HARTNER WALTER ,  GOTTINGER REINHARD ,  BONART DIETRICH

IPC: H01L29/40 ,  H01L21/74

公开(公告)号：DE102006015131A1

公开(公告)日：2007-10-11

申请号：DE102006015131

申请日：2006-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWETLICK WERNER ,  HARTNER WALTER ,  GOTTINGER REINHARD ,  BONART DIETRICH

IPC: H01L29/40 ,  H01L21/74

Abstract: The structure has a heavily doped buried layer (2) formed in parts of a semiconductor substrate (1). An epilayer (6) is arranged on the semiconductor substrate and the buried layer, and a sinker contact (3) passes from a surface of the epilayer layer till the buried layer. A trench isolation (4) framing the sinker contact is arranged, and electrically isolates the sinker contact from adjacent areas of the epilayer. An independent claim is also included for a method for producing a semiconductor structure.