公开(公告)号：DE59708003D1

公开(公告)日：2002-09-26

申请号：DE59708003

申请日：1997-06-27

Applicant: INFINEON TECHNOLOGIES AG ,  FRAUNHOFER GES FORSCHUNG

Inventor： GABRIC ZVONIMIR ,  SPINDLER DR ,  GRASSL THOMAS

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: Production of an insulation layer, functioning as an inter-metal dielectric (IMD), involves: (a) covering a substrate surface (2) with a first insulating layer (3) and then a metal (preferably aluminium) layer; (b) photo-structuring the metal layer to form circuit lines (4) which are then covered with a second insulating layer (7) on their surfaces and side faces (6); (c) removing the second insulating layer material (7) from the first insulating layer regions (3) between the circuit lines (4); and (d) depositing a third insulating layer (8) on the resulting structure by ozone-activated CVD with a growth rate which is greater on the first insulating layer material (3) than on the second insulating layer material (7). Preferably, the first insulating layer material (3) is phosphosilicate glass, borophosphosilicate glass or undoped silicate glass and the second insulating layer material (7) is titanium nitride.

公开(公告)号：AT222664T

公开(公告)日：2002-09-15

申请号：AT97110594

申请日：1997-06-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GABRIC ZVONIMIR ,  SPINDLER OSWALD DR ,  GRASSL THOMAS

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: Production of an insulation layer, functioning as an inter-metal dielectric (IMD), involves: (a) covering a substrate surface (2) with a first insulating layer (3) and then a metal (preferably aluminium) layer; (b) photo-structuring the metal layer to form circuit lines (4) which are then covered with a second insulating layer (7) on their surfaces and side faces (6); (c) removing the second insulating layer material (7) from the first insulating layer regions (3) between the circuit lines (4); and (d) depositing a third insulating layer (8) on the resulting structure by ozone-activated CVD with a growth rate which is greater on the first insulating layer material (3) than on the second insulating layer material (7). Preferably, the first insulating layer material (3) is phosphosilicate glass, borophosphosilicate glass or undoped silicate glass and the second insulating layer material (7) is titanium nitride.

公开(公告)号：DE59707295D1

公开(公告)日：2002-06-20

申请号：DE59707295

申请日：1997-08-28

Applicant: INFINEON TECHNOLOGIES AG ,  FRAUNHOFER GES FORSCHUNG

Inventor： GRASSL THOMAS ,  GABRIC ZVONIMIR ,  SPINDLER OSWALD

IPC: H01L21/768 ,  H01L21/316

Abstract: In a process for smoothening a substrate surface with level differences caused by metallic structures, a metallic layer made of a titanium compound is first applied on the surface and the side faces of the metallic structures before O3-activated separation of SiO2 or SiOF from a silicium precursor stage on the substrate surface provided with the metallic structures.