公开(公告)号：AT222664T

公开(公告)日：2002-09-15

申请号：AT97110594

申请日：1997-06-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GABRIC ZVONIMIR ,  SPINDLER OSWALD DR ,  GRASSL THOMAS

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: Production of an insulation layer, functioning as an inter-metal dielectric (IMD), involves: (a) covering a substrate surface (2) with a first insulating layer (3) and then a metal (preferably aluminium) layer; (b) photo-structuring the metal layer to form circuit lines (4) which are then covered with a second insulating layer (7) on their surfaces and side faces (6); (c) removing the second insulating layer material (7) from the first insulating layer regions (3) between the circuit lines (4); and (d) depositing a third insulating layer (8) on the resulting structure by ozone-activated CVD with a growth rate which is greater on the first insulating layer material (3) than on the second insulating layer material (7). Preferably, the first insulating layer material (3) is phosphosilicate glass, borophosphosilicate glass or undoped silicate glass and the second insulating layer material (7) is titanium nitride.