公开(公告)号：DE60122878T2

公开(公告)日：2007-04-05

申请号：DE60122878

申请日：2001-05-18

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： KOTHANDARAMAN CHANDRASEKHARAN ,  GRELLNER FRANK ,  IYER UMAR

IPC: H01L21/82 ,  H01L23/525

Abstract: Described herein is a fuse incorporating a covering layer disposed on a conductive layer, which is disposed on a polysilicon layer. The covering layer preferably comprises a relatively inert material, such as a nitride etchant barrier. The covering layer preferably has a region of relatively less-inert filler material. Upon programming of the fuse, the conductive layer, which can be a silicide, preferentially degrades in the region underlying the filler material of the covering layer. This preferential degradation results in a predictable "blowing" of the fuse in the fuse region underlying the filler material. Since the "blow" area is predictable, damage to adjacent structures can be minimized or eliminated.

公开(公告)号：DE60139622D1

公开(公告)日：2009-10-01

申请号：DE60139622

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STETTER MICHAEL ,  GRELLNER FRANK

IPC: H01L21/28 ,  H01L21/768 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108 ,  H01L27/11 ,  H01L27/112 ,  H01L29/78

Abstract: A method and apparatus for forming a direct buried strap for a semiconductor device, in accordance with the present invention, includes forming a gate stack on a semiconductor substrate, and forming a protective layer on sidewalls of the gate stack. The protective layer extends horizontally over a portion of the semiconductor substrate adjacent to the gate stack. A conductive layer is formed over the protective layer and in contact with a gate conductor of the gate stack and in contact with a diffusion region formed in the semiconductor substrate adjacent to the gate conductor. A dielectric layer is formed over the conductive layer, and the dielectric layer is patterned to expose a portion of the conductive layer. The portion of the conductive layer which is exposed includes a portion of the conductive layer over the gate conductor and a portion of the substrate adjacent to the gate conductor. The exposed areas of the conductive layer are silicided to form a direct buried strap and a silicided diffusion region in the substrate. The direct buried strap electrically connects the gate conductor to the diffusion region in a same level of the semiconductor device.