公开(公告)号：DE60103181D1

公开(公告)日：2004-06-09

申请号：DE60103181

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： CHEN A ,  HIRSCH ALEXANDER ,  IYER UMAR ,  ROVEDO NIVO ,  WANN HSING-JEN ,  ZHANG YING

IPC: H01L21/762 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78

Abstract: A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

公开(公告)号：DE60103181T2

公开(公告)日：2005-05-04

申请号：DE60103181

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： CHEN A ,  HIRSCH ALEXANDER ,  IYER UMAR ,  ROVEDO NIVO ,  WANN HSING-JEN ,  ZHANG YING

IPC: H01L21/762 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78

Abstract: A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

公开(公告)号：DE60122878T2

公开(公告)日：2007-04-05

申请号：DE60122878

申请日：2001-05-18

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： KOTHANDARAMAN CHANDRASEKHARAN ,  GRELLNER FRANK ,  IYER UMAR

IPC: H01L21/82 ,  H01L23/525

Abstract: Described herein is a fuse incorporating a covering layer disposed on a conductive layer, which is disposed on a polysilicon layer. The covering layer preferably comprises a relatively inert material, such as a nitride etchant barrier. The covering layer preferably has a region of relatively less-inert filler material. Upon programming of the fuse, the conductive layer, which can be a silicide, preferentially degrades in the region underlying the filler material of the covering layer. This preferential degradation results in a predictable "blowing" of the fuse in the fuse region underlying the filler material. Since the "blow" area is predictable, damage to adjacent structures can be minimized or eliminated.

公开(公告)号：DE60122878D1

公开(公告)日：2006-10-19

申请号：DE60122878

申请日：2001-05-18

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： KOTHANDARAMAN CHANDRASEKHARAN ,  GRELLNER FRANK ,  IYER UMAR

IPC: H01L21/82 ,  H01L23/525

Abstract: Described herein is a fuse incorporating a covering layer disposed on a conductive layer, which is disposed on a polysilicon layer. The covering layer preferably comprises a relatively inert material, such as a nitride etchant barrier. The covering layer preferably has a region of relatively less-inert filler material. Upon programming of the fuse, the conductive layer, which can be a silicide, preferentially degrades in the region underlying the filler material of the covering layer. This preferential degradation results in a predictable "blowing" of the fuse in the fuse region underlying the filler material. Since the "blow" area is predictable, damage to adjacent structures can be minimized or eliminated.