1.
    发明专利
    未知

    公开(公告)号:DE102004014482B4

    公开(公告)日:2007-05-03

    申请号:DE102004014482

    申请日:2004-03-24

    Abstract: Tolerances to be communicated to the manufacturer for a photomask fabrication process that are assigned as desired values of feature sizes to be realized on the photomask, are freed of restrictions by predefining, for a first feature size, a first desired value and a first tolerance assigned to the first desired value. The real discrepancy between the first feature size and the first desired value is taken into account when predefining desired values assigned to the further feature sizes to be provided on the photomask. As a result, a value which corresponds to a first approximation to the permitted feature size tolerance on the semiconductor wafer is provided for the tolerances of the desired values.

    2.
    发明专利
    未知

    公开(公告)号:DE102004014482A1

    公开(公告)日:2005-10-13

    申请号:DE102004014482

    申请日:2004-03-24

    Abstract: Tolerances to be communicated to the manufacturer for a photomask fabrication process that are assigned as desired values of feature sizes to be realized on the photomask, are freed of restrictions by predefining, for a first feature size, a first desired value and a first tolerance assigned to the first desired value. The real discrepancy between the first feature size and the first desired value is taken into account when predefining desired values assigned to the further feature sizes to be provided on the photomask. As a result, a value which corresponds to a first approximation to the permitted feature size tolerance on the semiconductor wafer is provided for the tolerances of the desired values.

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