公开(公告)号：DE102004009626A1

公开(公告)日：2004-11-25

申请号：DE102004009626

申请日：2004-02-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAKER STEVEN M ,  BERRY II JON S ,  COUSINEAU BRAIN ,  GERSTMEIER GUENTER ,  HEDGE MALATI ,  LEE JINHWAN ,  MALDEI MICHAEL ,  ZHANG WENCHAO

IPC: H01L21/02 ,  H01L27/08 ,  H01L29/94 ,  H01L29/768 ,  H01L21/8234

Abstract: A capacitor for a semiconductor device and a method of manufacturing a capacitor for a semiconductor device is disclosed that uses radial current flow. The capacitor includes a semiconductor substrate that includes a plurality of insulation islands. An insulation layer is formed over the semiconductor substrate. Gate electrodes are formed on top of the insulation layer. An array of CD contact pads including a plurality of CD contacts are connected to the semiconductor substrate in a first predetermined number of locations. An array of CG contact pads including at least one CG contact connected to the gate electrodes such that each CG contact is connected to a respective gate electrode above a respective insulation island in a second predetermined number of locations.