公开(公告)号：DE10107386C1

公开(公告)日：2002-08-22

申请号：DE10107386

申请日：2001-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GERGINTSCHEW ZENKO ,  HEIL HOLGER

IPC: H03K17/08 ,  H03K17/082 ,  H01L23/62

Abstract: A configuration for protecting an integrated circuit against over-temperature conditions is described. The configuration has at least one detector device, which identifies a disturbance situation of the integrated circuit, at least one temperature sensor, which detects the temperature of at least one part of the integrated circuit, and a logic device. The logic device ascertains a disturbance mode in dependence a detected disturbance situation and/or the detected temperature and which allocates a first temperature switching stage to the temperature sensor in the normal mode and allocates a second, lower temperature switching stage to the temperature sensor in the disturbance mode. Furthermore, the invention relates to an integrated circuit having such a configuration and also to a method for protecting an integrated circuit against over-temperature conditions.

公开(公告)号：DE10101074B4

公开(公告)日：2005-05-19

申请号：DE10101074

申请日：2001-01-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NUEBLING MARCUS ,  HEIL HOLGER

IPC: H02M7/5387 ,  H03K17/00 ,  H02P7/36

公开(公告)号：DE59610297D1

公开(公告)日：2003-05-08

申请号：DE59610297

申请日：1996-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GANTIOLER JOSEF-MATTHIAS ,  HEIL HOLGER ,  KRISCHKE NORBERT

IPC: G01K7/01 ,  H01L27/04 ,  H01L29/78

Abstract: The semiconductor device consists of several parallel switched cells. The temp. sensor includes a bipolar transistor adjacent the cell region of the power semiconductor device. A zone is provided between the base region of the bipolar transistor and the gate region of the cells of the power semiconductor device. The zone has the same conductivity as the neighbouring regions and is connected to a fixed voltage. The fixed voltage is smaller or greater than the supply voltage of the power semiconductor. The collector region of the bipolar transistor and the drain of the power semiconductor are formed by a single zone of the semiconductor body of the power semiconductor device.

公开(公告)号：DE10101074A1

公开(公告)日：2002-08-01

申请号：DE10101074

申请日：2001-01-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NUEBLING MARCUS ,  HEIL HOLGER

IPC: H02M7/5387 ,  H03K17/00 ,  H02P7/36

Abstract: The load has at least one input for an input signal, at least one output for providing an output signal and for connecting to at least one load, a control signal input, a first processing unit (30) with inputs and outputs connected to circuit inputs and outputs, a second processing unit (21) providing a setting signal and at least one coupling element (FF1-6) for feeding the input signal to the second unit depending on the control signal (RS). Independent claims are also included for the following: a method of providing a setting signal in a circuit for driving a load.