公开(公告)号：DE19935100A1

公开(公告)日：2001-03-15

申请号：DE19935100

申请日：1999-07-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SANDER RAINALD ,  XU CHIHAO ,  GANTIOLER JOSEF-MATTHIAS ,  AUER FRANK

IPC: H02M7/00 ,  H02M7/538 ,  H02P7/03 ,  H01L25/07 ,  H01L23/14

Abstract: A half-bridge circuit arrangement has two transistors (T1,T2) in which both transistors are connected in series by their drain electrodes, a driving voltage (UB) is applied to the series circuit, and a load (L) can be connected to the interconnected drain electrodes of both the transistors. The two transistors (T1,T2) are of opposite conductivity type and each transistor is produced on a discrete chip (CH1,CH2), with both chips placed with their rear faces on a common electrically conducting carrier, so that a drain electrode of the first transistor (T1) is connected to an equivalent drain electrode of the second transistor (T2). The conducting carrier forms a summation point and the load (L) is connectable to the conducting carrier or to the summation point.

公开(公告)号：DE19935100B4

公开(公告)日：2004-10-28

申请号：DE19935100

申请日：1999-07-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SANDER RAINALD ,  XU CHIHAO ,  GANTIOLER JOSEF-MATTHIAS ,  AUER FRANK

IPC: H02M7/00 ,  H02M7/538 ,  H02P7/03 ,  H01L25/07 ,  H01L23/14

Abstract: A half-bridge circuit arrangement has two transistors (T1,T2) in which both transistors are connected in series by their drain electrodes, a driving voltage (UB) is applied to the series circuit, and a load (L) can be connected to the interconnected drain electrodes of both the transistors. The two transistors (T1,T2) are of opposite conductivity type and each transistor is produced on a discrete chip (CH1,CH2), with both chips placed with their rear faces on a common electrically conducting carrier, so that a drain electrode of the first transistor (T1) is connected to an equivalent drain electrode of the second transistor (T2). The conducting carrier forms a summation point and the load (L) is connectable to the conducting carrier or to the summation point.

公开(公告)号：DE59610297D1

公开(公告)日：2003-05-08

申请号：DE59610297

申请日：1996-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GANTIOLER JOSEF-MATTHIAS ,  HEIL HOLGER ,  KRISCHKE NORBERT

IPC: G01K7/01 ,  H01L27/04 ,  H01L29/78

Abstract: The semiconductor device consists of several parallel switched cells. The temp. sensor includes a bipolar transistor adjacent the cell region of the power semiconductor device. A zone is provided between the base region of the bipolar transistor and the gate region of the cells of the power semiconductor device. The zone has the same conductivity as the neighbouring regions and is connected to a fixed voltage. The fixed voltage is smaller or greater than the supply voltage of the power semiconductor. The collector region of the bipolar transistor and the drain of the power semiconductor are formed by a single zone of the semiconductor body of the power semiconductor device.