公开(公告)号：DE102006013245A1

公开(公告)日：2007-10-04

申请号：DE102006013245

申请日：2006-03-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LAHNOR PETER ,  WUNNICKE ODO ,  HEITMANN JOHANNES ,  MOLL PETER ,  ORTH ANDREAS

IPC: H01L21/8242

Abstract: The method involves providing a substrate (1) with a substrate upper surface (10) with two surface sections (11, 12). A vertical columnar template is brought from a self-organized pattern material into the surface section (11). A mold layer is formed on the surface section (12) after forming the columnar template. The columnar template is removed after applying the mold layer, where an opening is formed in the mold layer via the surface section (11) of the substrate. Independent claims are also included for the following: (1) a method for manufacturing a contact structure (2) a method for manufacturing condensers in a substrate.

公开(公告)号：DE102006013246A1

公开(公告)日：2007-08-02

申请号：DE102006013246

申请日：2006-03-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEITMANN JOHANNES ,  MOLL PETER ,  WUNNICKE ODO ,  SCHLOESSER TILL

IPC: H01L27/108 ,  H01L21/8247

Abstract: A capacitor for a dynamic semiconductor memory cell, a memory and method of making a memory is disclosed. In one embodiment, a storage electrode of the capacitor has a pad-shaped lower section and a cup-shaped upper section, which is placed on top of the lower section. A lower section of a backside electrode encloses the pad-shaped section of the storage electrode. An upper section of the backside electrode is enclosed by the cup-shaped upper section of the storage electrode. A first capacitor dielectric separates the lower sections of the backside and the storage electrodes. A second capacitor dielectric separates the upper sections of the backside and the storage electrodes. The electrode area of the capacitor is enlarged while the requirements for the deposition of the capacitor dielectric are relaxed. Aspect ratios for deposition and etching processes are reduced.