公开(公告)号：DE102004060346B4

公开(公告)日：2006-10-19

申请号：DE102004060346

申请日：2004-12-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GRAF WERNER ,  HEINECK LARS ,  HORST JANA

IPC: H01L21/8239

Abstract: In a method for producing a semiconductor structure a semiconductor a substrate with a top surface is provided. A gate dielectric layer is provided on the top surface and on the gate dielectric layer is provided a memory cell array region with a first plurality of gate stacks and a peripheral element region with a second plurality of gate stacks. A dielectric layer is provided over the memory cell array region and the peripheral element region. A first source/drain implantation over the memory cell array region and the peripheral element region is carried out, a blocking mask over the memory cell array region is formed, the dielectric layer is removed using the blocking mask, and a second source/drain implantation over the memory cell array region and the peripheral element region is carried out, wherein the memory cell array region is protected by a mask.

公开(公告)号：DE102004060346A1

公开(公告)日：2006-07-20

申请号：DE102004060346

申请日：2004-12-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GRAF WERNER ,  HEINECK LARS ,  HORST JANA

IPC: H01L21/8239

Abstract: In a method for producing a semiconductor structure a semiconductor a substrate with a top surface is provided. A gate dielectric layer is provided on the top surface and on the gate dielectric layer is provided a memory cell array region with a first plurality of gate stacks and a peripheral element region with a second plurality of gate stacks. A dielectric layer is provided over the memory cell array region and the peripheral element region. A first source/drain implantation over the memory cell array region and the peripheral element region is carried out, a blocking mask over the memory cell array region is formed, the dielectric layer is removed using the blocking mask, and a second source/drain implantation over the memory cell array region and the peripheral element region is carried out, wherein the memory cell array region is protected by a mask.