公开(公告)号：DE10327709A1

公开(公告)日：2005-01-13

申请号：DE10327709

申请日：2003-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SECK MARTIN ,  BOETTNER THOMAS ,  HUTTNER THOMAS ,  DREXL STEFAN

IPC: H01L21/8228 ,  H01L27/082 ,  H01L21/331

Abstract: An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emitter connection region. The electrically conductive material of the connection region laterally overlaps the cutout.

公开(公告)号：DE10328008B4

公开(公告)日：2008-04-03

申请号：DE10328008

申请日：2003-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DREXL STEFAN ,  SECK MARTIN ,  BOETTNER THOMAS ,  HUTTNER THOMAS

IPC: H01L27/082 ,  H01L21/8228 ,  H01L29/417

Abstract: An explanation is given of, inter alia, an integrated circuit arrangement ( 100 ) containing an npn transistor ( 102 ) and a pnp transistor ( 104 ). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout ( 142 ) for an edge terminal region ( 120 ) and if the edge terminal region ( 120 ) has a part near the substrate which is arranged in the cutout ( 142 ) and a part remote from the substrate which is arranged outside the cutout ( 142 ) and overlaps the base terminal region ( 139 ).

公开(公告)号：DE10328008A1

公开(公告)日：2005-02-03

申请号：DE10328008

申请日：2003-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DREXL STEFAN ,  SECK MARTIN ,  BOETTNER THOMAS ,  HUTTNER THOMAS

IPC: H01L21/8228 ,  H01L27/082 ,  H01L29/417 ,  H01L21/331

Abstract: An explanation is given of, inter alia, an integrated circuit arrangement ( 100 ) containing an npn transistor ( 102 ) and a pnp transistor ( 104 ). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout ( 142 ) for an edge terminal region ( 120 ) and if the edge terminal region ( 120 ) has a part near the substrate which is arranged in the cutout ( 142 ) and a part remote from the substrate which is arranged outside the cutout ( 142 ) and overlaps the base terminal region ( 139 ).