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    METHOD FOR PRODUCING A BIPOLAR TRANSISTOR COMPRISING A POLYSILICON EMITTER
    4.
    发明申请
    METHOD FOR PRODUCING A BIPOLAR TRANSISTOR COMPRISING A POLYSILICON EMITTER 审中-公开
    用于生产双极型多晶硅发射

    公开(公告)号：WO03007361A3

    公开(公告)日：2003-04-24

    申请号：PCT/EP0208234

    申请日：2002-07-10

    Applicant: INFINEON TECHNOLOGIES AG ,  KRIZ JAKOB ,  SECK MARTIN ,  TILKE ARMIN

    Inventor： KRIZ JAKOB ,  SECK MARTIN ,  TILKE ARMIN

    IPC: H01L21/225 ,  H01L21/331 ,  H01L29/737

    CPC classification number: H01L29/66272 ,  H01L21/2257

    Abstract: The invention relates to a method for producing a bipolar transistor comprising a polysilicon emitter, according to which a collector region (12) of a first conductivity type and an adjacent base region (14) of a second conductivity type are created. At least one layer (16) consisting of an insulating material is then applied, said layer or layers being structured in such a way that at least one section of the base region (14) is exposed. A layer consisting of a polycrystalline semiconductor material of the first conductivity type, which is highly doped with doping atoms, is subsequently created, in such a way that the exposed section is essentially covered. A second layer (20) consisting of a highly conductive material is then created on the layer (18) consisting of the polycrystalline semiconductor material, forming a dual-layer emitter with the latter. At least one portion of the doping atoms of the first conductivity type of the highly doped polycrystalline semiconductor layer is then caused to diffuse into the base region (14), to create an emitter region (22) of the first conductivity type.

    Abstract translation: 用于制造双极多晶硅发射本发明的方法，首先产生一第一导电类型和相邻的第二导电型的基极区域（14）的集电极区域（12）。 现在，一个层（16）至少由绝缘材料，其特征在于，所述至少一个结构化的层，使得至少在基极区域（14）的一部分暴露施加。 接着，高度掺杂有第一导电类型掺杂原子的多晶半导体材料的层（18）中产生，使得基本上，所述暴露部分被覆盖。 现在，层（18）上的高导电材料的第二层（20）由多晶半导体材料制成，以形成具有一个发射极的双层相同的。 然后使至少所述第一导电类型，所述高度掺杂的多晶半导体层的掺杂剂原子的一部分，进入到基极区，以形成第一导电类型的发射极区（22）。

    6.
    发明专利
    未知

    公开(公告)号：DE10134089A1

    公开(公告)日：2003-01-30

    申请号：DE10134089

    申请日：2001-07-13

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SECK MARTIN ,  TILKE ARMIN ,  KRIZ JAKOB

    IPC: H01L21/225 ,  H01L21/331 ,  H01L29/73 ,  H01L29/732 ,  H01L29/737

    Abstract: The invention relates to a method for producing a bipolar transistor comprising a polysilicon emitter, according to which a collector region of a first conductivity type and an adjacent base region of a second conductivity type are created. At least one layer consisting of an insulating material is then applied, said layer or layers being structured in such a way that at least one section of the base region is exposed. A layer consisting of a polycrystalline semiconductor material of the first conductivity type, which is highly doped with doping atoms, is subsequently created, in such a way that the exposed section is essentially covered. A second layer consisting of a highly conductive material is then created on the layer consisting of the polycrystalline semiconductor material, forming a dual-layer emitter with the latter. At least one portion of the doping atoms of the first conductivity type of the highly doped polycrystalline semiconductor layer is then caused to diffuse into the base region, to create an emitter region of the first conductivity type.

    7.
    发明专利
    未知

    公开(公告)号：DE50305568D1

    公开(公告)日：2006-12-14

    申请号：DE50305568

    申请日：2003-01-23

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： RUDOLPH UWE ,  SECK MARTIN ,  TILKE ARMIN

    IPC: H01L21/331 ,  H01L29/10 ,  H01L29/32 ,  H01L29/423

    Abstract: In the inventive method of producing a base terminal structure for a bipolar transistor, an etch stop layer is applied on a single-crystal semiconductor substrate, a poly-crystal base terminal layer is produced on the etch stop layer and an emitter window is etched in the base terminal layer using the etch stop layer as an etch stop.

    8.
    发明专利
    未知

    公开(公告)号：DE10250204A1

    公开(公告)日：2004-05-13

    申请号：DE10250204

    申请日：2002-10-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STENGL REINHARD ,  MEISTER THOMAS ,  SCHAEFER HERBERT ,  BOECK JOSEF ,  SECK MARTIN ,  LACHNER RUDOLF

    IPC: H01L21/331 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/08 ,  H01L29/732

    Abstract: A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.

    9.
    发明专利
    未知

    公开(公告)号：DE10205712A1

    公开(公告)日：2003-08-28

    申请号：DE10205712

    申请日：2002-02-12

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： TILKE ARMIN ,  SECK MARTIN ,  RUDOLPH UWE

    IPC: H01L21/331 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732 ,  H01L29/73

    Abstract: In the inventive method of producing a base terminal structure for a bipolar transistor, an etch stop layer is applied on a single-crystal semiconductor substrate, a poly-crystal base terminal layer is produced on the etch stop layer and an emitter window is etched in the base terminal layer using the etch stop layer as an etch stop.

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