公开(公告)号：DE10224215A1

公开(公告)日：2003-12-18

申请号：DE10224215

申请日：2002-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KIRCHHOFF MARKUS ,  KURTENBACH ANDREAS ,  DRESCHER DIRK ,  VOGT MIRKO

IPC: C23C16/26 ,  C23C16/27 ,  C23C16/34 ,  C23C16/56 ,  H01L21/033 ,  H01L21/265 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  C23C14/48

Abstract: Following carbonaceous covering layer (2) deposition (e.g. by PCVD), ion implantation is carried out. Ionized carbon (4) or -nitrogen (4) is implanted into the covering layer. This converts the carbonaceous layer into diamond or a carbon nitride of the composition CxNy.