公开(公告)号：WO0041459A3

公开(公告)日：2001-05-10

申请号：PCT/DE0000047

申请日：2000-01-05

Applicant: INFINEON TECHNOLOGIES AG ,  SCHREMS MARTIN ,  DRESCHER DIRK ,  WURZER HELMUT ,  TEWS HELMUT

Inventor： SCHREMS MARTIN ,  DRESCHER DIRK ,  WURZER HELMUT ,  TEWS HELMUT

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

Abstract: The invention relates to a semiconductor element with at least one layer of tungsten oxide (WOx), optionally in a structured tungsten oxide (WOx) layer. The inventive semiconductor element is characterized in that the relative permittivity ( epsilon r) of the tungsten oxide layer (WOx) is higher than 50.

Abstract translation: 根据本发明，具有至少一个氧化钨的层（的WOx），半导体装置任选地提供氧化钨（WO x）的图形层。 本发明的半导体装置的特征在于，所述氧化钨（WO x）的相对介电常数（ε-r）为低于50更大

公开(公告)号：DE50015090D1

公开(公告)日：2008-05-21

申请号：DE50015090

申请日：2000-01-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHREMS MARTIN ,  DRESCHER DIRK ,  WURZER HELMUT ,  TEWS HELMUT

IPC: H01L21/00 ,  H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51

Abstract: A semiconductor element with at least one layer of tungsten oxide, optionally in a structured tungsten oxide layer, is described. The semiconductor element is characterized in that the relative premittivity of the tungsten oxide layer is higher than 50.

公开(公告)号：DE10030445A1

公开(公告)日：2002-01-10

申请号：DE10030445

申请日：2000-06-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS RENE ,  LEIBERG WOLFGANG ,  RUF ALEXANDER ,  LEHR MATTHIAS ,  DRESCHER DIRK

IPC: H01L23/525

Abstract: The connection element in an integrated circuit has a layer structure arranged between two conductive structures. The layer structure has a dielectric layer which can be destroyed by application of a predetermined voltage. At least one conductive structure is composed of tungsten. The conductive structure adjoins a conductive layer made of tungsten or a tungsten compound, which is a constituent part of the layer structure and which adjoins the dielectric layer.

公开(公告)号：DE19947053C1

公开(公告)日：2001-05-23

申请号：DE19947053

申请日：1999-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHREMS MARTIN ,  DRESCHER DIRK ,  WURZER HELMUT ,  KARCHER WOLFRAM

IPC: H01L21/8242 ,  H01L27/108

Abstract: Trench capacitor comprises: trench (108) having an upper region (109) and a lower region (111) formed in substrate (101); insulating collar (168) formed in upper region of trench; trenched sink (170) formed in the substrate and partially penetrating lower region of trench; a dielectric layer (164) made of tungsten oxide as capacitor dielectric; and a conducting trench filling (161) in the trench. An Independent claim is also included for a process for the production of the trench capacitor. Preferred Features: The conducting trench filling is made of a tungsten-containing material. A barrier layer made of silicon oxide, oxynitride, tungsten nitride, titanium nitride or tantalum nitride is arranged between the dielectric layer and the substrate.

公开(公告)号：DE10224215A1

公开(公告)日：2003-12-18

申请号：DE10224215

申请日：2002-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KIRCHHOFF MARKUS ,  KURTENBACH ANDREAS ,  DRESCHER DIRK ,  VOGT MIRKO

IPC: C23C16/26 ,  C23C16/27 ,  C23C16/34 ,  C23C16/56 ,  H01L21/033 ,  H01L21/265 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  C23C14/48

Abstract: Following carbonaceous covering layer (2) deposition (e.g. by PCVD), ion implantation is carried out. Ionized carbon (4) or -nitrogen (4) is implanted into the covering layer. This converts the carbonaceous layer into diamond or a carbon nitride of the composition CxNy.