Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"KURTH KARIN" Page 1

1.

发明专利
未知

公开(公告)号：DE102005002533B4

公开(公告)日：2007-09-13

申请号：DE102005002533

申请日：2005-01-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYNE CHRISTIAN , NASH EVA , BODENDORF CHRISTOF , KURTH KARIN

IPC: G03F1/00 , G03F1/36

Abstract: The method involves transferring a provisional auxiliary mask layout into a final mask layout using an optical proximity correction (OPC) process. Main structures (120, 130) of the auxiliary mask layout optically are assigned to non-terminable scatter bars (160). The scatter bars are changed exclusively within the frame of the process, where the main structures remain unchanged.

2.

发明专利
Final mask layouts producing method, involves assigning main structures of auxiliary mask layout optically to scatter bars which are changed within frame of optical proximity correction process, where main structures remain unchanged 未知

公开(公告)号：DE102005002533A1

公开(公告)日：2006-07-27

申请号：DE102005002533

申请日：2005-01-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYNE CHRISTIAN , NASH EVA , BODENDORF CHRISTOF , KURTH KARIN

IPC: G03F1/00 , G03F1/36

Abstract: The method involves transferring a provisional auxiliary mask layout into a final mask layout using an optical proximity correction (OPC) process. Main structures (120, 130) of the auxiliary mask layout optically are assigned to non-terminable scatter bars (160). The scatter bars are changed exclusively within the frame of the process, where the main structures remain unchanged.

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