Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"NASH EVA" Page 1

1.

发明专利
未知

公开(公告)号：DE102005002533B4

公开(公告)日：2007-09-13

申请号：DE102005002533

申请日：2005-01-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYNE CHRISTIAN , NASH EVA , BODENDORF CHRISTOF , KURTH KARIN

IPC: G03F1/00 , G03F1/36

Abstract: The method involves transferring a provisional auxiliary mask layout into a final mask layout using an optical proximity correction (OPC) process. Main structures (120, 130) of the auxiliary mask layout optically are assigned to non-terminable scatter bars (160). The scatter bars are changed exclusively within the frame of the process, where the main structures remain unchanged.

2.

发明专利
Final mask layouts producing method, involves assigning main structures of auxiliary mask layout optically to scatter bars which are changed within frame of optical proximity correction process, where main structures remain unchanged 未知

公开(公告)号：DE102005002533A1

公开(公告)日：2006-07-27

申请号：DE102005002533

申请日：2005-01-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYNE CHRISTIAN , NASH EVA , BODENDORF CHRISTOF , KURTH KARIN

IPC: G03F1/00 , G03F1/36

Abstract: The method involves transferring a provisional auxiliary mask layout into a final mask layout using an optical proximity correction (OPC) process. Main structures (120, 130) of the auxiliary mask layout optically are assigned to non-terminable scatter bars (160). The scatter bars are changed exclusively within the frame of the process, where the main structures remain unchanged.

3.

发明专利
Mask for lithographic projection on substrate, has arrangement with auxiliary structures and having space for structural components, where space is larger than another space having adjacent auxiliary structures 未知

公开(公告)号：DE102005034669A1

公开(公告)日：2007-02-08

申请号：DE102005034669

申请日：2005-07-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUCH LOTHAR , NASH EVA , MEYNE CHRISTIAN , KOESTLER WOLFRAM , HASMANN JENS

IPC: G03F1/00 , G03F1/36 , G03F7/00

Abstract: The mask has a pattern having two line-shaped structural components (10, 12) that are formed on the mask parallel to each other and form a gap (20). An arrangement of auxiliary structures has two auxiliary structures (14, 15) that are arranged in the gap parallel to the structural components. The arrangement of the auxiliary structures has space for the components, where the space is larger than another space having adjacent auxiliary structures. An independent claim is also included for a method of forming a pattern on mask for lithographic projection on a substrate.

4.

发明专利
Aberration avoiding mask layout producing method for mask, involves arranging optically not resolvable auxiliary structure adjacent to section in one direction that is different and runs transverse to other direction 未知

公开(公告)号：DE102005002529A1

公开(公告)日：2006-07-27

申请号：DE102005002529

申请日：2005-01-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYNE CHRISTIAN , SEMMLER ARMIN , NASH EVA

IPC: G03F1/00 , G03F1/36

Abstract: The method involves converting a provisional auxiliary mask layout into a final mask layout by using an optical proximity correction (OPC) method. Main structures of the auxiliary mask layout are arranged in area of a section in a direction and are associated to an optically not resolvable auxiliary structure (140) that is arranged adjacent to the section in other different direction that runs transverse to the former direction.

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