公开(公告)号：DE102005002533B4

公开(公告)日：2007-09-13

申请号：DE102005002533

申请日：2005-01-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYNE CHRISTIAN ,  NASH EVA ,  BODENDORF CHRISTOF ,  KURTH KARIN

IPC: G03F1/00 ,  G03F1/36

Abstract: The method involves transferring a provisional auxiliary mask layout into a final mask layout using an optical proximity correction (OPC) process. Main structures (120, 130) of the auxiliary mask layout optically are assigned to non-terminable scatter bars (160). The scatter bars are changed exclusively within the frame of the process, where the main structures remain unchanged.

公开(公告)号：DE10356693A1

公开(公告)日：2005-07-14

申请号：DE10356693

申请日：2003-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  THIELE JOERG ,  MEYNE CHRISTIAN ,  BODENDORF CHRISTOF

IPC: G03F1/00 ,  G06F17/50

Abstract: A method for producing for a mask a mask layout which avoids aberrations in which a provisional auxiliary mask layout produced, in particular in accordance with a prescribed electrical circuit diagram is converted into the mask layout with the aid of an OPC method. At least two different OPC variants are used in the course of the OPC method by subdividing the original auxiliary mask layout into at least two layout areas and processing each of the layout areas in accordance with one of the at least two OPC variants.

公开(公告)号：DE102005002533A1

公开(公告)日：2006-07-27

申请号：DE102005002533

申请日：2005-01-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYNE CHRISTIAN ,  NASH EVA ,  BODENDORF CHRISTOF ,  KURTH KARIN

IPC: G03F1/00 ,  G03F1/36

Abstract: The method involves transferring a provisional auxiliary mask layout into a final mask layout using an optical proximity correction (OPC) process. Main structures (120, 130) of the auxiliary mask layout optically are assigned to non-terminable scatter bars (160). The scatter bars are changed exclusively within the frame of the process, where the main structures remain unchanged.