公开(公告)号：DE10243468A1

公开(公告)日：2003-05-15

申请号：DE10243468

申请日：2002-09-19

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： LIAN JINGYU ,  LIN CHENTING ,  SAENGER KATHERINE ,  WONG KWONG HON

IPC: C23C16/40 ,  C23C16/56 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3105 ,  H01L21/8239

Abstract: A method for forming a crystalline dielectric layer deposits an amorphous metallic oxide dielectric layer on a surface. The amorphous metallic oxide dielectric layer is treated with a plasma at a temperature of less than or equal to 400 degrees Celsius to form a crystalline layer.

公开(公告)号：DE69932010T2

公开(公告)日：2007-01-11

申请号：DE69932010

申请日：1999-08-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LIN CHENTING

IPC: H01L21/306 ,  B24B37/04 ,  H01L21/304

Abstract: In accordance with the present invention, a method is disclosed for releasing semiconductor wafers from a polishing pad. The method includes the steps of applying a slurry to a polishing pad, rotating the polishing pad having slurry thereon while applying pressure against a wafer such that the wafer is polished by the slurry, introducing water to the polishing pad, increasing the rotational speed of the polishing pad to remove a portion of the slurry, decreasing the pressure during the step of increasing rotational speed to substantially prevent further polishing and removing the wafer from the polishing pad.

公开(公告)号：DE60122872D1

公开(公告)日：2006-10-19

申请号：DE60122872

申请日：2001-05-02

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： WANG YUN-YU ,  JAMMY RAJARAO ,  KIMBALL J ,  KOTECKI E ,  LIAN JENNY ,  LIN CHENTING ,  MILLER A ,  NAGEL NICOLAS ,  SHEN HUA ,  WILDMAN S

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/8242

Abstract: A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

公开(公告)号：DE69932010D1

公开(公告)日：2006-08-03

申请号：DE69932010

申请日：1999-08-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LIN CHENTING

IPC: H01L21/306 ,  B24B37/04 ,  H01L21/304

Abstract: In accordance with the present invention, a method is disclosed for releasing semiconductor wafers from a polishing pad. The method includes the steps of applying a slurry to a polishing pad, rotating the polishing pad having slurry thereon while applying pressure against a wafer such that the wafer is polished by the slurry, introducing water to the polishing pad, increasing the rotational speed of the polishing pad to remove a portion of the slurry, decreasing the pressure during the step of increasing rotational speed to substantially prevent further polishing and removing the wafer from the polishing pad.

公开(公告)号：DE60014994T2

公开(公告)日：2006-02-09

申请号：DE60014994

申请日：2000-02-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LIN CHENTING ,  VAN DEN BERG ROBERT ,  PANDEY SUMIT

IPC: B24B37/04 ,  B24B57/02 ,  H01L21/302 ,  H01L21/304

Abstract: Improved CMP uniformity is achieved by providing improved control of the slurry distribution. Improved slurry distribution is achieved by, for example, the use of a slurry dispenser (42) that dispenses slurry (44) from a plurality of dispensing points. Providing a squeeze bar between the slurry dispenser (42) and wafer to redistribute the slurry (44) also improves the slurry distribution.

公开(公告)号：DE60014994D1

公开(公告)日：2004-11-25

申请号：DE60014994

申请日：2000-02-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LIN CHENTING ,  VAN DEN BERG ROBERT ,  PANDEY SUMIT

IPC: B24B37/04 ,  B24B57/02 ,  H01L21/302 ,  H01L21/304

Abstract: Improved CMP uniformity is achieved by providing improved control of the slurry distribution. Improved slurry distribution is achieved by, for example, the use of a slurry dispenser (42) that dispenses slurry (44) from a plurality of dispensing points. Providing a squeeze bar between the slurry dispenser (42) and wafer to redistribute the slurry (44) also improves the slurry distribution.