公开(公告)号：DE10034005A1

公开(公告)日：2002-01-24

申请号：DE10034005

申请日：2000-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FOERSTER MATTHIAS ,  MORGENSCHWEIS ANJA ,  MARTINI TORSTEN ,  SACHSE JENS-UWE

IPC: H01L21/02 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/8242

Abstract: Production of a micro-roughness on a surface comprises forming finely divided semiconductor grains from a process gas on the surface. Preferred Features: The semiconductor grains are silicon or germanium grains. The process gas is SiH4 or GeH4. The semiconductor grains are formed in a temperature region of 500-600 degrees C for 5-60 minutes. The surface is an oxide, nitride or silicon substrate. The process gas has a hydrogen dilution of 1: 20-0.2.