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    ARRANGEMENT AND METHOD FOR DETECTING DEFECTS ON A SUBSTRATE IN A PROCESSING TOOL
    1.
    发明申请
    ARRANGEMENT AND METHOD FOR DETECTING DEFECTS ON A SUBSTRATE IN A PROCESSING TOOL 审中-公开
    用于检测处理工具中基板上的缺陷的布置和方法

    公开(公告)号：WO02093639A3

    公开(公告)日：2003-03-20

    申请号：PCT/EP0205189

    申请日：2002-05-10

    Applicant: INFINEON TECHNOLOGIES AG ,  SEIDEL TORSTEN ,  OTTO RALF ,  SCHUMACHER KARL ,  SCHEDEL THORSTEN ,  MARX ECKHARD ,  HRASCHAN GUENTHER

    Inventor： SEIDEL TORSTEN ,  OTTO RALF ,  SCHUMACHER KARL ,  SCHEDEL THORSTEN ,  MARX ECKHARD ,  HRASCHAN GUENTHER

    IPC: G03F1/08 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/66 ,  H01L21/677

    CPC classification number: H01L21/67225 ,  G03F7/7065 ,  H01L21/67271 ,  H01L21/67288 ,  H01L22/12

    Abstract: A processing tool (1) for manufacturing semiconductor devices (2), e.g. a lithography cluster, comprises a device transfer area (8) with an optical sensor (10), preferably a CCD-camera, and an illumination system (11) mounted within, such that a substrate (2) being transferred to or from one of its processing chambers (1a, 1b, 1c) can be scanned during its movement at low resolution. The substrate (2) may be either a semiconductor wafer to be manufactured or a reticle or mask used to perform an exposure on said wafer. The scanning is performed twice, prior and after processing in at least one the processing chambers (1a, 1b, 1c) of the processing tool (1). Both images are compared and optionally subtracted from each other. Defects imposed to the substrate due to contaminating particles only during the present processes with sizes larger than 10 microm are visible on the subtracted image, while defects imposed earlier are diminished as well as structures formed from e.g. a mask pattern below 10 microm. Pattern recognition allows an efficient classification of the defects being just detected in a processing tool (1). Thus, semiconductor device yield and metrology capacity are advantageously increased.

    Abstract translation: 一种用于制造半导体器件（2）的加工工具（1），例如， 光刻簇包括具有光学传感器（10）的装置传送区域（8），优选地是CCD照相机，以及安装在其内的照明系统（11），使得基板（2）被转移到 其处理室（1a，1b，1c）可以在其低分辨率的运动期间被扫描。 衬底（2）可以是要制造的半导体晶片或用于在所述晶片上进行曝光的掩模版或掩模。 在处理工具（1）的至少一个处理室（1a，1b，1c）中处理之前和之后进行两次扫描。 两个图像被比较并且可选地相互减去。 仅在尺寸大于10微米的本工艺过程中由于污染颗粒而施加到基材上的缺陷在减去的图像上是可见的，而较早施加的缺陷以及由例如形成的结构减少。 10微米以下的掩模图案。 模式识别允许在处理工具（1）中刚刚检测到的缺陷的有效分类。 因此，有利地增加了半导体器件的产量和计量能力。

    3.
    发明专利
    未知

    公开(公告)号：DE19733412B4

    公开(公告)日：2005-08-04

    申请号：DE19733412

    申请日：1997-08-01

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MARX ECKHARD ,  GERHARD DETLEF ,  MUELLER JENS

    IPC: H01L23/544

    Abstract: A configuration for the automatic inscription or reinscription of wafers provides the wafers with a marking for identification and for process management during the production of semiconductor components. The wafer must be moved between different stations for the automatic inscription of a wafer in an appropriate device. Considerable transport movements are saved by the integration of a read station in an inscription chamber having a positioning unit for the wafer.

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