公开(公告)号：DE102004009095B4

公开(公告)日：2007-03-08

申请号：DE102004009095

申请日：2004-02-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANTZ ULRICH ,  GUITTET PIERRE-YVES

IPC: G01M11/00 ,  G03F7/20 ,  G03F9/00

公开(公告)号：DE102004028851B4

公开(公告)日：2006-04-13

申请号：DE102004028851

申请日：2004-06-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BLOESS HARALD ,  WELLHAUSEN UWE ,  REINIG PETER ,  WEIDNER PETER ,  GUITTET PIERRE-YVES ,  MANTZ ULRICH

IPC: G01B21/20 ,  G01B21/16 ,  G01B21/30 ,  G21K7/00 ,  H01L21/66

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

公开(公告)号：DE102004034544A1

公开(公告)日：2006-02-09

申请号：DE102004034544

申请日：2004-07-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REINIG PETER ,  BLOESS HARALD ,  GUITTET PIERRE-YVES

IPC: B81C99/00 ,  G01N21/95 ,  H01L21/66 ,  H01L21/8242

Abstract: A method of analyzing a buried layer (3) in a wafer with a semiconductor component comprises using electromagnetic radiation (9) that enters a recess (4) in the surface (2) and leaves through a second recess (5) after penetrating to a measuring section of the buried layer and is received (8) and evaluated. An independent claim is also included for a component, especially a semiconductor wafer, analyzed as above.

公开(公告)号：DE102004028851A1

公开(公告)日：2005-10-20

申请号：DE102004028851

申请日：2004-06-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BLOESS HARALD ,  WELLHAUSEN UWE ,  REINIG PETER ,  WEIDNER PETER ,  GUITTET PIERRE-YVES ,  MANTZ ULRICH

IPC: G01B21/16 ,  G01B21/20 ,  G01B21/30 ,  G21K7/00 ,  H01L21/66

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

公开(公告)号：DE102004004406A1

公开(公告)日：2005-08-25

申请号：DE102004004406

申请日：2004-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEIDNER PETER ,  MANTZ ULRICH ,  GUITTET PIERRE-YVES ,  BLOESS HARALD

IPC: G01F17/00 ,  G01G9/00 ,  H01L21/306 ,  H01L21/66 ,  H01L21/8242

Abstract: Determining the volume of an etched structure in a semiconductor substrate, comprises weighing the substrate, etching the substrate by targeted material removal, and weighing the substrate. The volume of the etched structure is calculated by taking into account the weight loss and the material density.

公开(公告)号：DE102004009095A1

公开(公告)日：2005-09-29

申请号：DE102004009095

申请日：2004-02-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANTZ ULRICH ,  GUITTET PIERRE-YVES

IPC: G01M11/00 ,  G03F7/20 ,  G03F9/00

Abstract: Mask layer`s structure superimposition accuracy determination method involves scanning a rear side of a semiconductor substrate (10) and a mask layer (14) using electromagnetic radiations. The radiations reflected from the substrate and layer are absorbed. Images of the absorbed radiation are evaluated to find positions of alignment marks on the substrate and layer. The accuracy of superimposition of a mask structure in the layer is determined based on the positions. An independent claim is also included for an optical system for determining the accuracy of superimposition of a structure in a mask layer on a semiconductor layer.

公开(公告)号：DE102004004857A1

公开(公告)日：2005-08-18

申请号：DE102004004857

申请日：2004-01-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUITTET PIERRE-YVES ,  MANTZ ULRICH ,  WEIDNER PETER ,  SOMMERKORN SILKE

IPC: G01N21/21 ,  H01L21/66

Abstract: Characterising method contains steps of irradiating chip region, containing structure elements, with electromagnetic radiation of wavelength greater than lateral structure size of structure elements and picking-up measuring signature of radiation reflected on chip. Signature, computed using layer model, is approximated to measuring signature by variation of model parameter(s). Layer model reproduces optical layer condition of chip and varied model parameter characterises structure. Independent claims are included for use of method.

公开(公告)号：DE10346850A1

公开(公告)日：2005-05-19

申请号：DE10346850

申请日：2003-10-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANTZ ULRICH ,  WEIDNER PETER ,  WIENHOLD RALPH ,  GUITTET PIERRE-YVES

IPC: G01B11/22 ,  G01B11/30 ,  G01N21/84 ,  G01B11/24 ,  B82B3/00 ,  H01L21/66 ,  G01N21/88

Abstract: The method involves applying electromagnetic scanning radiation to the layer with the recess, with a wavelength larger than the lateral dimension of the recess. The response radiation is received and the interaction of the radiation with the layer is used to determine characteristic data for derivation of the dimensions or volume of the recess and the properties of material in the recess. An independent claim is included for a method of manufacturing a component with a recess.

公开(公告)号：DE10349893B3

公开(公告)日：2005-04-07

申请号：DE10349893

申请日：2003-10-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUITTET PIERRE-YVES ,  BLOES HARALD

IPC: F25B21/02 ,  F25B21/04 ,  F25D3/10 ,  F25D19/00 ,  G01J5/06 ,  G01J5/02

Abstract: The cooling device has a cooling medium container (10) and a thermoelectric element (32), in heat conductive coupling with the interior of the container and the detector (30) at opposite ends and supplied with current via a controlled current source (56), dependent on the difference between the actual detector temperature and the required detector temperature. The thermoelectric element is provided by a Peltier element, an analysis device (60) detecting the supplied current, for detecting the time point at which the cooling medium is exhausted by extrapolation of the current characteristic. An independent claim for a method for cooling a detector for IR radiation is also included.

公开(公告)号：DE10356519A1

公开(公告)日：2005-07-07

申请号：DE10356519

申请日：2003-12-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUITTET PIERRE-YVES ,  MANTZ ULRICH ,  THIEME PETER ,  DRUMMER HEIKE

IPC: G01B11/00 ,  G01B11/03 ,  G01B11/24 ,  G03F9/00 ,  H01L21/66

Abstract: A process to determine a geometric shape on the surface of a semiconductor layer, as for integrated circuits, comprises irradiating the layer with radiation of a wavelength at which the layer is transparent, measuring the reflection or transmission from the layer and determining the position of the shape from the image received. An independent claim is also included for an optical system for the above process.