公开(公告)号：DE10115912A1

公开(公告)日：2002-10-17

申请号：DE10115912

申请日：2001-03-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOEBEL BERND ,  MOL PETER ,  SEIDL HARALD ,  GUTSCHE MARTIN

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/8242 ,  H01L21/027 ,  H01L21/32 ,  H01L21/3213 ,  B81C1/00

Abstract: The invention relates to a lithographic method for removing a thin masking layer, particularly a Si3N4 layer on a side of a recess in a semi-conductor arrangement. According to the invention, an ion beam is orientated in an inclined manner at a certain angle towards the recess, enabling the thin masking layer to be removed in the regions exposed to the beams.