公开(公告)号：DE102006009978A1

公开(公告)日：2007-10-31

申请号：DE102006009978

申请日：2006-03-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTH KARSTEN ,  MUENZER MARK NILS ,  LICHT THOMAS

IPC: H01L23/34

Abstract: The module has a semiconductor unit (40) with a semiconductor component (30) provided on an upper side (20a) of a substrate (20). A base plate (10) serves as a support, where the semiconductor unit is attached with a bottom side (20b) of the substrate on an upper side (10a) of the base plate. The base plate is made of a composite material with a metallic material (11`), and an insert (12) is made of aluminum/silicon carbide material (12`) in the metallic material.

公开(公告)号：DE102006009978B4

公开(公告)日：2008-12-18

申请号：DE102006009978

申请日：2006-03-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTH KARSTEN ,  MUENZER MARK NILS ,  LICHT THOMAS

IPC: H01L23/36 ,  H01L23/12 ,  H01L25/065

公开(公告)号：DE102006014609A1

公开(公告)日：2007-10-11

申请号：DE102006014609

申请日：2006-03-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTH KARSTEN ,  MUENZER MARK NILS

IPC: H01L23/12 ,  H01L23/498 ,  H01L25/07

Abstract: The module has a direct copper bonding (DCB) substrate arranged on a carrier plate (2) and serving as a carrier for a semiconductor unit e.g. insulated gate bipolar transistor (IGBT). The substrate has a substrate underside-metallization layer (6) and a substrate layer (3). A plumb layer (5) is provided between the substrate and the carrier plate such that the plumb layer forms a layer compound (4) together with the substrate underside-metallization layer. Edges of the layer compound are formed such that radii of the edges lie in a specific range.