公开(公告)号：JP2008277757A

公开(公告)日：2008-11-13

申请号：JP2008050828

申请日：2008-02-29

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： GABLER VOLKER ,  LICHT THOMAS

IPC: H01L21/52 ,  H01L23/12

CPC classification number: H01L24/33 ,  H01L23/49513 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/93 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/78743 ,  H01L2224/83192 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing process by which the position of a solder connection section between a semiconductor chip and a substrate is kept coincident so as not to be shifted.
SOLUTION: The substrate 3 has a surface region 4 that can be soldered, and a solder layer is arranged on the surface region 4 that can be soldered. A backside 10 of the semiconductor chip is fixed onto the solder layer. The solder layer includes a solder material 6 that can be melted repeatedly and that has vacuum-resistance. First of all, the semiconductor chip 2 is fixed on the surface region by the bonding process to manufacture the solder connection section 1. Next, the bonded solder connection section 1, which has the solder layer in a molten state, is evacuated in a vacuum-soldering furnace to achieve the solder layer that doesn't contain gaps.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造工艺，其中使半导体芯片和衬底之间的焊料连接部分的位置保持一致，以便不会发生偏移。 解决方案：基板3具有能够被焊接的表面区域4，并且可以焊接在表面区域4上的焊料层。 半导体芯片的背面10固定在焊料层上。 焊料层包括能够重复熔融并具有真空电阻的焊料6。 首先，通过接合工艺将半导体芯片2固定在表面区域上，制造焊料连接部分1.接下来，将具有熔融状态的焊料层的接合焊料连接部1在真空中抽真空 实现不含间隙的焊料层。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：WO2006058860A3

公开(公告)日：2006-08-17

申请号：PCT/EP2005056187

申请日：2005-11-24

Applicant: SIEMENS AG ,  INFINEON TECHNOLOGIES AG ,  BAUDELOT ERIC ,  LICHT THOMAS ,  SELIGER NORBERT ,  WEIDNER KARL

Inventor： BAUDELOT ERIC ,  LICHT THOMAS ,  SELIGER NORBERT ,  WEIDNER KARL

IPC: H01L23/473 ,  H01L23/482 ,  H01L23/538

CPC classification number: H01L23/482 ,  H01L23/3735 ,  H01L23/473 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: The invention relates to a heat exchange device and to a method for producing said heat exchange device. The invention also relates to an arrangement of a structural component and the heat exchange device and to a method for producing said arrangement. The heat exchange device comprises at least one laminated composite comprising a layer and at least one additional layer, a fluid channel for guiding a temperature-adjusting fluid being arranged between the layer and the additional layer in such a manner that the fluid channel is delimited by the two layers and at least one of the layer comprises a plastic film. The method for producing the heat exchange device comprises the following steps: a) providing a layer having a trench, and b) laminating a plastic film onto said layer having the trench in such a manner that the fluid channel is formed. The inventive arrangement is characterized in that the heat exchange device and the structural component are positioned in relation to each other in such a manner that heat can be exchanged by heat conduction between the structural component and at least one of the layers of the laminated composite of the heat exchange device. The method for producing the heat exchange device comprises the following steps: a') providing a structural component on a substrate, and b') applying the heat exchange device in such a manner that heat conduction between the structural component and at least one of the layers of the laminated composite can take place. The heat exchange device is used for cooling a semiconductor module.

Abstract translation: 本发明涉及一种热交换装置和用于制造所述热交换装置的方法。 此外，提供了用于生产的组件和组件的布置的热交换装置和方法。 热交换装置具有带层和至少一个另外的层，其特征在于，流体通道布置成用于使温度调节流体的层和另外的层之间的所述至少一个复合层，该流体通道是由两个层界定，并且这些层中的至少一个是具有塑料膜 ， 用于生产提供了下列方法步骤的热交换装置：a）提供具有沟槽的层，和b）用，使得流体通道形成在沟槽中的层上层叠塑料薄膜。 在热交换装置和所述装置的结构被布置成彼此成使得热交换可以通过在部件和热交换装置的层复合材料的层中的至少一个之间的热传导发生。 为了制造以下的处理步骤被执行的组件组成：a“）在基板上设置的部件，以及b”）沉积的热交换装置，使得可以存在的部件之间的热管的层复合材料的层中的至少一个。 的热交换装置被用于冷却功率半导体模块。

公开(公告)号：DE102011081606B4

公开(公告)日：2022-08-04

申请号：DE102011081606

申请日：2011-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILKE DR ULRICH ,  LOHMANN MAIK ,  WESSEL CARSTEN ,  LICHT THOMAS ,  SCHMIDT MICHAEL

IPC: B23K3/00 ,  B23K3/08

Abstract: Kühlvorrichtung zum Abkühlen des noch flüssigen Lotes (23) mindestens einer herzustellenden großflächigen Lötverbindung, wobei die Kühlvorrichtung eine evakuierbare Kammer (1) umfasst, eine in der evakuierbaren Kammer (1) angeordnete Halterung (2), sowie eine in der evakuierbaren Kammer (1) angeordnete Wärmesenke, und wobei die Wärmesenke so gesteuert werden kann, dass eine passgenau in die Halterung (2) eingelegte ebene Kupferplatte (5), die- eine ebene untere Hauptfläche (5b) aufweist,- eine ebene obere Hauptfläche (5t), die in einer vertikalen Richtung (v) von der unteren Hauptfläche (5b) beabstandet ist und die eine Anzahl von N ≥ 2 zwei nebeneinander liegende, rechteckige Oberflächenabschnitte (51) mit einer Fläche von jeweils wenigstens 30 mm x 30 mm,- eine konstante Dicke von 5 mm, sowie- eine homogene Anfangstemperatur von mindestens 220°C, in einer Stickstoffatmosphäre bei einem Druck in der evakuierbaren Kammer (1) von 1013,25 hPa gekühlt wird, so dass die Temperatur an der oberen Hauptfläche (5t) in keinem der Oberflächenabschnitte (51) ein lokales Maximum aufweist, das vom Rand (52) des betreffenden Oberflächenabschnitts (51) beabstandet ist, und zwar so lange, bis in keinem der Oberflächenabschnitte (51) eine Mindestabkühltemperatur vorliegt, die wenigstens 200°C beträgt.

公开(公告)号：DE102007035608A1

公开(公告)日：2009-02-05

申请号：DE102007035608

申请日：2007-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT ,  HARTUNG HANS ,  LICHT THOMAS

IPC: H01L23/28 ,  H01L21/50 ,  H01L23/15 ,  H01L23/488

Abstract: The module (1) has a flexible group layer (2) with a semiconductor chip (3) e.g. thyristor, arranged on a circuit substrate (4). A connecting element (5) connects an electrode (7) of the semiconductor chip with a contact connection surface (8) of the substrate. A cover (11) has the flexible group layer in which the chip, connecting element and substrate are embedded. The module includes a diffusion inhibiting protective layer (12) between the flexible group layer and upper side and edge side of the chip, and between the connecting element and substrate. The semiconductor chip is selected from insulated gate bipolar transistor (IGBT), thyristor, gate turn-off thyristor (GTO), free wheel or rectifier diode. An independent claim is also included for a method for fabricating a semiconductor module.

公开(公告)号：DE102006009978B4

公开(公告)日：2008-12-18

申请号：DE102006009978

申请日：2006-03-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTH KARSTEN ,  MUENZER MARK NILS ,  LICHT THOMAS

IPC: H01L23/36 ,  H01L23/12 ,  H01L25/065

公开(公告)号：DE102004036521B4

公开(公告)日：2007-05-16

申请号：DE102004036521

申请日：2004-07-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LICHT THOMAS ,  BOETTCHER BARBARA ,  RADUEGE CHRISTIAN

IPC: B23K1/06

公开(公告)号：DE102004018476B4

公开(公告)日：2009-06-18

申请号：DE102004018476

申请日：2004-04-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LICHT THOMAS

IPC: H01L23/48 ,  H01L23/34 ,  H01L23/367 ,  H01L25/07

Abstract: A power semiconductor arrangement has an electrically insulating and thermally conductive substrate, which is provided with structured metallization on at least one side, a cooling device which is in thermal contact with the other side of the substrate, at least one semiconductor component which is arranged on the substrate and is electrically connected to the structured metallization, an entirely or partially electrically insulating film which is arranged at least on that side of the substrate at which the at least one semiconductor component is placed, and which is laminated without any cavities onto the substrate including or excluding the at least one semiconductor component, and a contact-pressure device which exerts a force on the substrate locally and via the at least one semiconductor component such that the substrate is pressed against the cooling device.

公开(公告)号：DE102007046349A1

公开(公告)日：2008-04-10

申请号：DE102007046349

申请日：2007-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAYERER REINHOLD ,  LICHT THOMAS

IPC: H01L23/373 ,  H01L23/14 ,  H01L23/473

Abstract: An arrangement for cooling a power semiconductor module, the power semiconductor module having a substrate with a ceramic plate and may have a metallization thereon, the arrangement has a container for the intake of a coolant with a heat-conducting plate; the heat-conducting plate having two sides, one side joined to the metallization of the substrate and the other side being in contact with the coolant; wherein the heat-conducting plate is made of materials having a metal matrix composite (MMC) material with a filling content, which results in a thermal expansion of below that of copper.

公开(公告)号：DE102005020087A1

公开(公告)日：2006-11-09

申请号：DE102005020087

申请日：2005-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAYERER REINHOLD ,  LICHT THOMAS ,  KEMPER ALFRED

IPC: H01L21/60 ,  H01L23/49 ,  H01L23/498 ,  H01L25/07

Abstract: The method involves evenly pressing a surface area on a surface of a carrier for a semiconductor device by the action of a die (6) and a roller, where a steel plate is used as a base for the carrier. The surface area is bondable with a thin wire or a semiconductor chip is mountable on the surface area. The die and roller are loaded with ultrasonic (US), while the die or the roller acts on the surface area, where the ultrasonic has longitudinal or transversal ultrasonic waves that move the die or the roller perpendicular to the surface of the carrier. An independent claim is also included for a device for producing an even surface area on a surface of a carrier for a semiconductor device.

公开(公告)号：DE102011081606A1

公开(公告)日：2013-02-28

申请号：DE102011081606

申请日：2011-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LOHMANN MAIK ,  WESSEL CARSTEN ,  LICHT THOMAS ,  SCHMIDT MICHAEL ,  WILKE DR ULRICH

IPC: B23K3/00

Abstract: Eine Kühlvorrichtung zum Abkühlen des noch flüssigen Lotes (23) einer herzustellenden großflächigen Lötverbindung umfasst eine evakuierbare Kammer (1), eine in der evakuierbaren Kammer (1) angeordnete Halterung (2), sowie eine in der evakuierbaren Kammer (1) angeordnete Wärmesenke. In die Halterung (2) kann eine als Testkörper dienende ebene Kupferplatte (5) eingelegt werden, mit der sich die Wirkungsweise der Kühlvorrichtung testen und überprüfen lässt. Die Kupferplatte (5) weist eine ebene untere Hauptfläche (5b) auf, eine ebene obere Hauptfläche (5t), die in einer vertikalen Richtung (v) von der unteren Hauptfläche (5b) beabstandet ist, eine konstante Dicke von 5 mm, sowie eine homogene Anfangstemperatur von mindestens 220°C. Auf der oberen Hauptfläche (5t) läßt sich eine Anzahl von N ≥ 2 zwei nebeneinander liegender, rechteckiger Oberflächenabschnitte (51) mit einer Fläche von jeweils wenigstens 50 mm × 50 mm festlegen. Das Kühlen der Kupferplatte mit Hilfe der Wärmesenke kann so erfolgen, dass die Temperatur an der oberen Hauptfläche in keinem der rechteckigen Oberflächenabschnitte ein lokales Maximum aufweist, das vom Rand des betreffenden Oberflächenabschnitts beabstandet ist, und zwar so lange, bis in keinem der Oberflächenabschnitte eine Temperatur von mehr als 150°C vorliegt. Wenn das Lot bei 150°C ausreichend verfestigt ist, so liegt eine fertig gefügte Lötverbindung zwischen den Lötpartnern vor. Eine solche Kühlvorrichtung läßt sich in eine Lötanlage integrieren.