公开(公告)号：DE59704257D1

公开(公告)日：2001-09-13

申请号：DE59704257

申请日：1997-11-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHEITER THOMAS ,  NAEHER ULRICH ,  HIEROLD CHRISTOFER

IPC: G01L9/12 ,  G01H11/06 ,  G01L1/14 ,  G01L9/00 ,  H01L29/84 ,  H04R19/00

Abstract: PCT No. PCT/DE97/02740 Sec. 371 Date Dec. 21, 1998 Sec. 102(e) Date Dec. 21, 1998 PCT Filed Nov. 21, 1997 PCT Pub. No. WO98/23934 PCT Pub. Date Jun. 4, 1998In a relative pressure sensor or miniaturized microphone as a micromechanical sensor component, a polysilicon membrane is arranged over a polysilicon membrane of an SOI substrate. A recess that is connected to the cavity between the membrane and the body silicon layer by openings in the body silicon layer is present in the substrate on the back side. Given an excursion of the membrane, a pressure equalization can therefore occur in the cavity as a result of these openings. The measurement occurs capacitatively by electrical connection of the electrically conductively doped membrane and a doped region formed in the body silicon layer.

公开(公告)号：DE59712371D1

公开(公告)日：2005-08-25

申请号：DE59712371

申请日：1997-11-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHEITER THOMAS ,  HIEROLD CHRISTOPHER ,  NAEHER ULRICH

IPC: H01L21/314 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/316 ,  H01L21/318 ,  H01L29/84

Abstract: In a process for manufacturing a micromechanical component, a 5 nm to 50 nm thick oxide or nitride layer is deposited as a protective layer (6) on a functional element (4) made of polysilicon by LPCVD (low pressure chemical vapour deposition).

公开(公告)号：DE59606550D1

公开(公告)日：2001-04-12

申请号：DE59606550

申请日：1996-04-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NAEHER ULRICH ,  BERTHOLD ADRIAN ,  SCHEITER THOMAS ,  HIEROLD CHRISTOFER

IPC: G01L9/12 ,  G01L1/14 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84