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    1.
    发明专利
    未知

    公开(公告)号：BR9912939A

    公开(公告)日：2005-04-12

    申请号：BR9912939

    申请日：1999-08-12

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BASSE PAUL-WERNER VON ,  WILLER JOSEF ,  SCHEITER THOMAS ,  MARKSTEINER STEPHAN

    IPC: G01B7/28 ,  A61B5/117 ,  G06K7/08 ,  G06K9/00 ,  G06T1/00 ,  H01L31/00

    Abstract: A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.

    2.
    发明专利
    未知

    公开(公告)号：DE59611182D1

    公开(公告)日：2005-02-24

    申请号：DE59611182

    申请日：1996-04-19

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHEITER THOMAS ,  NAEHER DR ,  HIEROLD DR

    IPC: C23F1/02 ,  C23F1/12 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311

    Abstract: The method involves bringing a sample (1) to be treated, containing SiO2, into a receptacle (2) having at least one gas inlet opening (3) and a gas outlet opening (4). Controllable valves (5) are used to supply measured quantities of fluorine acid gas and steam into the receptacle. The gases fed into the receptacle reach to the silicon dioxide in the sample in sufficient quantity for etching. However the gases are limited such that condensation of the steam into fluid water on the sample during the etching process is reduced. An etching process is then carried out. Steam which is produced as a reaction product by etching is removed before the appearance of condensation through the gas outlet opening. At the same time, an inert gas, e.g. N2, is fed into the receptacle through the gas inlet. These steps are all repeated as often as required.

    6.
    发明专利
    未知

    公开(公告)号：DE59900961D1

    公开(公告)日：2002-04-11

    申请号：DE59900961

    申请日：1999-08-12

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： VON BASSE PAUL-WERNER ,  WILLER JOSEF ,  SCHEITER THOMAS ,  MARKSTEINER STEPHAN

    IPC: G01B7/28 ,  A61B5/117 ,  G06K7/08 ,  G06K9/00 ,  G06T1/00

    Abstract: A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.

    7.
    发明专利
    未知

    公开(公告)号：DE59704257D1

    公开(公告)日：2001-09-13

    申请号：DE59704257

    申请日：1997-11-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHEITER THOMAS ,  NAEHER ULRICH ,  HIEROLD CHRISTOFER

    IPC: G01L9/12 ,  G01H11/06 ,  G01L1/14 ,  G01L9/00 ,  H01L29/84 ,  H04R19/00

    Abstract: PCT No. PCT/DE97/02740 Sec. 371 Date Dec. 21, 1998 Sec. 102(e) Date Dec. 21, 1998 PCT Filed Nov. 21, 1997 PCT Pub. No. WO98/23934 PCT Pub. Date Jun. 4, 1998In a relative pressure sensor or miniaturized microphone as a micromechanical sensor component, a polysilicon membrane is arranged over a polysilicon membrane of an SOI substrate. A recess that is connected to the cavity between the membrane and the body silicon layer by openings in the body silicon layer is present in the substrate on the back side. Given an excursion of the membrane, a pressure equalization can therefore occur in the cavity as a result of these openings. The measurement occurs capacitatively by electrical connection of the electrically conductively doped membrane and a doped region formed in the body silicon layer.

    8.
    发明专利
    未知

    公开(公告)号：BR9911980A

    公开(公告)日：2001-03-27

    申请号：BR9911980

    申请日：1999-07-01

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WILLER JOSEF ,  BASSE PAUL-WERNER VON ,  SCHEITER THOMAS

    IPC: A61B5/117 ,  G06K9/00 ,  G06T1/00 ,  H01L21/312 ,  H01L21/314 ,  H01L29/94

    Abstract: A semiconductor component with passivation includes at least two double passivating layers, of which an uppermost is applied to a planar surface of a layer located therebelow. The double passivating layers include two layers of different dielectric materials, for example silicon oxide and silicon nitride. The respective thicknesses of the individual passivating layers can be adapted to dimensions of the structuring of the layer to which the passivation is applied. This produces a reliable passivation which is particularly suitable for capacitively measuring fingerprint sensors.

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