公开(公告)号：DE59712073D1

公开(公告)日：2004-12-16

申请号：DE59712073

申请日：1997-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  GABRIC ZVONIMIR ,  NEUREITHER BERNHARD

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.

公开(公告)号：AT282247T

公开(公告)日：2004-11-15

申请号：AT97935455

申请日：1997-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  GABRIC ZVONIMIR ,  NEUREITHER BERNHARD

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.

公开(公告)号：DE59711114D1

公开(公告)日：2004-01-22

申请号：DE59711114

申请日：1997-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  GABRIC ZVONIMIR ,  NEUREITHER BERNHARD

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.

公开(公告)号：AT256340T

公开(公告)日：2003-12-15

申请号：AT97935454

申请日：1997-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  GABRIC ZVONIMIR ,  NEUREITHER BERNHARD

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.

公开(公告)号：DE19629766C2

公开(公告)日：2002-06-27

申请号：DE19629766

申请日：1996-07-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NEUREITHER BERNHARD ,  GABRIC ZVONIMIR

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762 ,  H01L21/304 ,  H01L21/316

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.