公开(公告)号：AT282247T

公开(公告)日：2004-11-15

申请号：AT97935455

申请日：1997-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  GABRIC ZVONIMIR ,  NEUREITHER BERNHARD

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.

公开(公告)号：DE59712073D1

公开(公告)日：2004-12-16

申请号：DE59712073

申请日：1997-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  GABRIC ZVONIMIR ,  NEUREITHER BERNHARD

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.

公开(公告)号：DE102019120799A1

公开(公告)日：2020-02-06

申请号：DE102019120799

申请日：2019-08-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PELZ GEORG ,  ELBEL NORBERT

IPC: G01S7/481 ,  G01S17/08

Abstract: Ein elektronisches System umfasst eine pixelierte Lichtquelle mit einer Vielzahl von einzeln steuerbaren Pixeln, eine Steuerung, die ausgebildet ist, um die pixelierte Lichtquelle zu steuern, einen Photosensor, der konfiguriert ist, um Lichtsignale zu detektieren, die von der pixelierten Lichtquelle emittiert werden, und eine Analyseeinheit, die konfiguriert ist, um Objekte mit unterschiedlichen Eigenschaften, die in Reichweite der pixelierten Lichtquelle und des Photosensors eintreten, auf Basis der vom Photosensor detektierten Lichtsignale zu erkennen. Außerdem werden entsprechende Verfahren zur Objekterkennung und Materialanalyse beschrieben.

公开(公告)号：DE10056885A1

公开(公告)日：2002-05-29

申请号：DE10056885

申请日：2000-11-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  LACHNER RUDOLF ,  REICHERT HANSJOERG

IPC: H01L21/28 ,  H01L29/423 ,  H01L29/78 ,  H01L21/336

公开(公告)号：DE59711114D1

公开(公告)日：2004-01-22

申请号：DE59711114

申请日：1997-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  GABRIC ZVONIMIR ,  NEUREITHER BERNHARD

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.

公开(公告)号：AT256340T

公开(公告)日：2003-12-15

申请号：AT97935454

申请日：1997-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELBEL NORBERT ,  GABRIC ZVONIMIR ,  NEUREITHER BERNHARD

IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762

Abstract: A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.