公开(公告)号：WO02093639A3

公开(公告)日：2003-03-20

申请号：PCT/EP0205189

申请日：2002-05-10

Applicant: INFINEON TECHNOLOGIES AG ,  SEIDEL TORSTEN ,  OTTO RALF ,  SCHUMACHER KARL ,  SCHEDEL THORSTEN ,  MARX ECKHARD ,  HRASCHAN GUENTHER

Inventor： SEIDEL TORSTEN ,  OTTO RALF ,  SCHUMACHER KARL ,  SCHEDEL THORSTEN ,  MARX ECKHARD ,  HRASCHAN GUENTHER

IPC: G03F1/08 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/66 ,  H01L21/677

CPC classification number: H01L21/67225 ,  G03F7/7065 ,  H01L21/67271 ,  H01L21/67288 ,  H01L22/12

Abstract: A processing tool (1) for manufacturing semiconductor devices (2), e.g. a lithography cluster, comprises a device transfer area (8) with an optical sensor (10), preferably a CCD-camera, and an illumination system (11) mounted within, such that a substrate (2) being transferred to or from one of its processing chambers (1a, 1b, 1c) can be scanned during its movement at low resolution. The substrate (2) may be either a semiconductor wafer to be manufactured or a reticle or mask used to perform an exposure on said wafer. The scanning is performed twice, prior and after processing in at least one the processing chambers (1a, 1b, 1c) of the processing tool (1). Both images are compared and optionally subtracted from each other. Defects imposed to the substrate due to contaminating particles only during the present processes with sizes larger than 10 microm are visible on the subtracted image, while defects imposed earlier are diminished as well as structures formed from e.g. a mask pattern below 10 microm. Pattern recognition allows an efficient classification of the defects being just detected in a processing tool (1). Thus, semiconductor device yield and metrology capacity are advantageously increased.

Abstract translation: 一种用于制造半导体器件（2）的加工工具（1），例如， 光刻簇包括具有光学传感器（10）的装置传送区域（8），优选地是CCD照相机，以及安装在其内的照明系统（11），使得基板（2）被转移到 其处理室（1a，1b，1c）可以在其低分辨率的运动期间被扫描。 衬底（2）可以是要制造的半导体晶片或用于在所述晶片上进行曝光的掩模版或掩模。 在处理工具（1）的至少一个处理室（1a，1b，1c）中处理之前和之后进行两次扫描。 两个图像被比较并且可选地相互减去。 仅在尺寸大于10微米的本工艺过程中由于污染颗粒而施加到基材上的缺陷在减去的图像上是可见的，而较早施加的缺陷以及由例如形成的结构减少。 10微米以下的掩模图案。 模式识别允许在处理工具（1）中刚刚检测到的缺陷的有效分类。 因此，有利地增加了半导体器件的产量和计量能力。

公开(公告)号：GB2379555B

公开(公告)日：2005-02-09

申请号：GB0228420

申请日：2002-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHEDEL THORSTEN ,  SCHUMACHER KARL ,  FISCHER THOMAS ,  HOMMEN HEIKO ,  OTTO RALF ,  SCHMIDT SEBASTIAN

IPC: G03F7/20 ,  H01L21/66

Abstract: While a first leading semiconductor wafer (11) already processed in a process appliance (1) and belonging to a batch is being measured in a microscope measuring instrument (2) in relation to values for the structure parameters 30, a second or further semiconductor wafer (12) belonging to the batch is processed in the process appliance (1). An event signal (100) reports, for example, an inspection carried out successfully of the first wafer, so that the following wafers (12) no longer need to be inspected. Using the measured results, the process parameters (31) of the process appliance (1) are automatically readjusted. Events such as maintenance work or parameter drifts in trend maps etc. are detected in control units (8 or 9) and, via the output of an event signal (102), for example in an event database (40), lead to the event-based selection of structure parameters (30') to be measured and/or to the initiation of a leading wafer (11). Limiting-value violations (21) of at least one process parameter (31), detected by a control unit (8), are responded to by a warning signal (101) and likewise fed into the event database (40).

公开(公告)号：GB2379555A

公开(公告)日：2003-03-12

申请号：GB0228420

申请日：2002-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHEDEL THORSTEN ,  SCHUMACHER KARL ,  FISCHER THOMAS ,  HOMMEN HEIKO ,  OTTO RALF ,  SCHMIDT SEBASTIAN

IPC: G03F7/20 ,  H01L21/66

Abstract: While the first forward processed semiconductor wafer (11) of a batch in a process device (1) is measured for values for structural parameters (30), a second or other semiconductor wafers (12) of the batch is/are processed in said process device (1). A result signal (100) indicates a successfully conducted inspection of the first wafer for example, whereupon the subsequent wafers (12) do not need to be examined. The process parameters (31) of the process device (1) are automatically adjusted according to the measuring results. Events such as maintenance or parameter drift in trend cards etc. are detected in control units (8 or 9) and lead to event-related selection of the structural parameters (30') and/or initiation of a forward wafer (11) by outputting an event signal (102) e.g. in an event data bank (40).A warning signal (101) is issued by a control unit (8) in response to detected threshold value infringements (21) for at least one process parameter (31) and is also fed into the event data base (40).

公开(公告)号：DE10120701A1

公开(公告)日：2002-10-31

申请号：DE10120701

申请日：2001-04-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FISCHER THOMAS ,  SCHEDEL THORSTEN ,  SCHUMACHER KARL ,  HOMMEN HEIKO ,  OTTO RALF ,  SCHMIDT SEBASTIAN

IPC: G03F7/20 ,  H01L21/66

Abstract: While a first leading semiconductor wafer (11) already processed in a process appliance (1) and belonging to a batch is being measured in a microscope measuring instrument (2) in relation to values for the structure parameters 30, a second or further semiconductor wafer (12) belonging to the batch is processed in the process appliance (1). An event signal (100) reports, for example, an inspection carried out successfully of the first wafer, so that the following wafers (12) no longer need to be inspected. Using the measured results, the process parameters (31) of the process appliance (1) are automatically readjusted. Events such as maintenance work or parameter drifts in trend maps etc. are detected in control units (8 or 9) and, via the output of an event signal (102), for example in an event database (40), lead to the event-based selection of structure parameters (30') to be measured and/or to the initiation of a leading wafer (11). Limiting-value violations (21) of at least one process parameter (31), detected by a control unit (8), are responded to by a warning signal (101) and likewise fed into the event database (40).

公开(公告)号：DE10241590A1

公开(公告)日：2004-03-18

申请号：DE10241590

申请日：2002-09-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOEMIG TOBIAS ,  HEGER PERCY ,  OTTO RALF

IPC: H01J37/32

Abstract: The plasma processing chamber (2) is coupled to a gas feed/vacuum generator (3) and the process parameters are controlled by an advanced process tool, APC, (1). The end point of the plasma cleaning operation is determined by monitoring the DC voltage bias signal (4) using a suitable transducer (5). The output signal is fed to a processor (6).