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公开(公告)号：DE59707373D1
公开(公告)日：2002-07-04
申请号：DE59707373
申请日：1997-07-10
Applicant: INFINEON TECHNOLOGIES AG
Inventor： PENKA VOLKER , MAHNKOPF REINHARD , WURZER HELMUT
IPC: H01L21/28 , H01L21/265 , H01L21/285 , H01L21/768
Abstract: A method for fabricating a semiconductor component having a low contact resistance with respect to heavily doped or siliconized zones in a semiconductor body. Fluorine ions are implanted into the heavily doped or siliconized zone in the vicinity of a contact hole before a titanium layer is applied to the heavily doped or siliconized zone in the vicinity of the contact hole. As a result of the fluorine, any oxide layers present in the contact hole region can be broken up by less titanium, with the result that a thinner titanium layer is sufficient. In addition, the formation of titanium silicide in the contact hole is promoted.
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公开(公告)号：DE10230949A1
公开(公告)日：2004-01-22
申请号：DE10230949
申请日：2002-07-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CANAUD THIERRY , FROHNMUELLER TILL , HANUSCHEK THOMAS , MAASS MARCEL , PENKA VOLKER
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公开(公告)号：DE10230949B4
公开(公告)日：2004-10-28
申请号：DE10230949
申请日：2002-07-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CANAUD THIERRY , FROHNMUELLER TILL , HANUSCHEK THOMAS , MAASS MARCEL , PENKA VOLKER
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