公开(公告)号：WO2004032201A3

公开(公告)日：2004-06-10

申请号：PCT/EP0310218

申请日：2003-09-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAHNKOPF REINHARD ,  NEUMUELLER WALTER ,  PRIGGE ODIN ,  SCHAFBAUER THOMAS ,  SCHRUEFER KLAUS

IPC: H01L21/266 ,  H01L21/74 ,  H01L21/8238

CPC classification number: H01L21/743 ,  H01L21/266 ,  H01L21/74 ,  H01L21/823878 ,  H01L21/823892

Abstract: A method of fabricating a semiconductor connective region of a first conductivity type through a semiconductor layer of a second conductivity type which at least partly separates a bulk portion of semiconductor body (substrate) of the first conductivity type from a semiconductor well of the first conductivity type includes a step of implanting ions into a portion of the layer to convert the conductivity of the implanted portion to the first conductivity type. This electrically connects the well to the bulk portion of the body. Any biasing potential applied to the bulk portion of the body is thus applied to the well. This eliminates any need to form a contact in the well for biasing the well and thus allows the well to be reduced in size.

Abstract translation: 一种通过第二导电类型的半导体层制造第一导电类型的半导体连接区域的方法，该半导体层至少部分地将第一导电类型的半导体本体（衬底）的主体部分与第一导电类型的半导体阱分开 包括将离子注入该层的一部分以将注入部分的导电率转换为第一导电类型的步骤。 这将井与本体的主体部分电连接。 因此，施加到身体的主体部分的任何偏置电位被施加到井。 这消除了在井中形成用于偏压井的接触的任何需要，从而允许井的尺寸减小。

公开(公告)号：DE102008000141A1

公开(公告)日：2008-08-07

申请号：DE102008000141

申请日：2008-01-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERTHOLD ADRIAN ,  BIANCO MICHAEL ,  MAHNKOPF REINHARD

IPC: H01L29/78 ,  H01L21/336

Abstract: A low noise transistor and a method of making a low noise transistor. A noise-reducing agent is introduced into the gate electrode and then moved into the gate dielectric of a transistor.

公开(公告)号：DE102008000141B4

公开(公告)日：2014-02-20

申请号：DE102008000141

申请日：2008-01-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERTHOLD ADRIAN ,  BIANCO MICHAEL ,  MAHNKOPF REINHARD

IPC: H01L21/336 ,  H01L21/265 ,  H01L29/78

Abstract: Verfahren zum Ausbilden eines Feldeffekttransistors mit den Schritten: Ausbilden eines Gatestapels über einem Halbleitermaterial, wobei der Gatestapel ein über dem Halbleitermaterial ausgebildetes Gatedielektrikum (52) und eine über dem Gatedielektrikum ausgebildete Gateelektrode (56) beinhaltet; Einbringen eines rauschen-reduzierenden Mittels (90) in die Gateelektrode (56); und Verschieben von zumindest einem Teil des rauschen-reduzierenden Mittels (90) von der Gateelektrode (56) in das Gatedielektrikum (52), wobei der Schritt des Einbringens eine Ionenimplantation aufweist, bei der die Dosis des rauschen-reduzierenden Mittels (90) größer als oder gleich ungefähr 1016 Ionen/cm2ist.

公开(公告)号：DE59707373D1

公开(公告)日：2002-07-04

申请号：DE59707373

申请日：1997-07-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PENKA VOLKER ,  MAHNKOPF REINHARD ,  WURZER HELMUT

IPC: H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L21/768

Abstract: A method for fabricating a semiconductor component having a low contact resistance with respect to heavily doped or siliconized zones in a semiconductor body. Fluorine ions are implanted into the heavily doped or siliconized zone in the vicinity of a contact hole before a titanium layer is applied to the heavily doped or siliconized zone in the vicinity of the contact hole. As a result of the fluorine, any oxide layers present in the contact hole region can be broken up by less titanium, with the result that a thinner titanium layer is sufficient. In addition, the formation of titanium silicide in the contact hole is promoted.