Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"PRAKASH RAMESH" Page 1

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发明专利
Monolithic integrated circuit device for providing high-ohmic resistance or RC-filter using series NMOS and PMOS field effect transistors 未知

公开(公告)号：DE10331571A1

公开(公告)日：2005-02-03

申请号：DE10331571

申请日：2003-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PAULUS CHRISTIAN , PRAKASH RAMESH , BREDERLOW RALF

IPC: H03H11/04 , H03H11/02

Abstract: The integrated circuit device has at least one NMOS field effect transistor (T(N)1,T(N)2) and at least one PMOS field effect transsitor (T(P)), each having 2 channel terminals and a gate terminal and connected in series, their gate voltages (V(GN),V(GP) selected so that at least one of the series transistors is below its threshold voltage for providing an effective resistance (R) across the series circuit.

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