公开(公告)号：DE102005042331B3

公开(公告)日：2007-04-05

申请号：DE102005042331

申请日：2005-09-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PRITCHARD DAVID ,  KLEINT CHRISTOPH ANDREAS ,  OLLIGS DOMINIK ,  BOUBEKEUR HOCINE ,  MUELLER TORSTEN

IPC: H01L21/8247

Abstract: Dielectric gratings are formed between the word line stacks. Spacers are applied to the sidewalls of the word line stacks and the dielectric gratings. In the openings between the spacers, silicon is epitaxially grown on the upper surfaces of source/drain regions, which are implanted self-aligned to the word line stacks. A silicide is formed on the grown silicon, and a metal layer is applied and structured to form local interconnects, which connect the source/drain regions to upper bit lines.