公开(公告)号：DE59608801D1

公开(公告)日：2002-04-04

申请号：DE59608801

申请日：1996-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEBBEKER HEINZ ,  RECZEK WERNER ,  SAVIGNAC DOMINIQUE ,  TERLETZKI HARTMUD

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02

Abstract: The invention concerns an integrated circuit comprising at least one stray field-effect transistor (Tpar) or a stray diode which contains two adjacent doped regions (2) of the same or opposite types of conduction and an insulating region (1) disposed therebetween. The doped regions (2) are each connected to a connection pad of the integrated circuit. In order to increase resistance to electrostatic discharges, the length (L) of the insulating region (1) in the lateral direction is equal to or greater than the length of the longest discharge path of electrostatic discharge-protective structures (TESD) connected to the connection path (4).