公开(公告)号：JP2006243737A

公开(公告)日：2006-09-14

申请号：JP2006057844

申请日：2006-03-03

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： HENKEL THOMAS ,  KOEHLE RODERICK ,  NOELSCHER CHRISTOPH ,  RENNER KERSTIN

IPC: G03F1/00

CPC classification number: G03F1/29 ,  G03F1/32 ,  G03F1/38

Abstract: PROBLEM TO BE SOLVED: To provide a lithography mask capable of forming an aperture of an interval smaller and larger than the critical interval simultaneously in a sure manner, and a manufacturing method thereof. SOLUTION: The lithography mask comprises first regions 50, 52, 54, and 56 having a non-transparent layer, and semi-transparent second regions and third regions 60, 62, 64, 66, 70, 72, 74 and 76 which are different in optical thickness. In order to form through holes 34 and 36 whose interval is smaller than the critical interval, a first section 44 having the second regions 62 and 64, and the third regions 72 and 74 is provided. The second regions and the third regions are disposed alternately and are surrounded by the first region 50. In order to form through holes 32 and 38 whose interval is larger than the critical interval, second sections 42 and 46 having the third regions 70 and 76 are provided. The third regions are surrounded by the second regions 60 and 66 which are surrounded by the first regions 50 joined at multiple positions. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够以可靠的方式同时形成间隔小于临界间隔的间隔的光刻掩模及其制造方法。 光刻掩模包括具有不透明层的第一区域50,52,54和56以及半透明第二区域和第三区域60,62,64,66,70,72,74和76 其光学厚度不同。 为了形成间隔小于临界区间的通孔34和36，提供了具有第二区域62和64以及第三区域72和74的第一区段44。 第二区域和第三区域交替设置并被第一区域50围绕。为了形成间隔大于临界区间的通孔32和38，具有第三区域70和76的第二区段42和46是 提供。 第三区域由被连接在多个位置的第一区域50包围的第二区域60和66围绕。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：DE102005017516B3

公开(公告)日：2007-01-25

申请号：DE102005017516

申请日：2005-04-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RENNER KERSTIN ,  NOELSCHER CHISTOPH ,  MUELDERS THOMAS

IPC: G03F7/20

公开(公告)号：DE102005009805A1

公开(公告)日：2006-09-14

申请号：DE102005009805

申请日：2005-03-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NOELSCHER CHRISTOPH ,  HENKEL THOMAS ,  RENNER KERSTIN ,  KOEHLE RODERICK

IPC: G03F1/00

Abstract: Lithography mask for the lithographic patterning of a resist layer on a substrate having first regions, in which the lithography mask has a nontransparent layer, and second and third regions, which differ in terms of the optical thickness of the lithography mask and in which the lithography mask is at least semitransparent. The lithography mask comprises a first section having a plurality of second regions and a plurality of third regions, which are arranged alternately and surrounded by a first region, for the lithographic production of resist openings at distances which are less than a predetermined limit distance. Furthermore, the lithography mask comprises a second section having a multiplicity of third regions, each of which is surrounded by a second region surrounded by a multiply contiguous first region, for the lithographic production of resist openings at distances which are greater than a predetermined limit distance.