Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"ROEWER FALK" Page 1

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发明专利
Integrated semiconductor memory e.g. dynamic RAM, has control circuit controlling memory circuit, such that intermediately stored data is output to side or to another side of clock signal from memory circuit during write access 未知

公开(公告)号：DE102006026970A1

公开(公告)日：2007-12-13

申请号：DE102006026970

申请日：2006-06-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROEWER FALK , SICHERT CHRISTIAN , SCHNABEL FLORIAN

IPC: G11C11/4093

Abstract: The memory has a memory layer (100) with memory cells to store data. A control circuit (40) controls a memory circuit (20) e.g. latch, in such a manner that intermediately stored data is outputted to a side or to another side of a clock signal from the memory circuit during write access and the intermediately stored data is outputted to a third side and supplied to the memory layer. The control circuit controls the memory circuit in such a manner that the data supplied from the memory layer and the data are stored in the memory circuit during read access. An independent claim is also included for a method of operating an integrated semiconductor memory.

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