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公开(公告)号:DE102005051943A1
公开(公告)日:2006-07-06
申请号:DE102005051943
申请日:2005-10-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GREGORIUS PETER , RUCKERBAUER HERMANN , SAVIGNAC DOMINIQUE , SICHERT CHRISTIAN , WALLNER PAUL
IPC: G11C7/10
Abstract: The present invention relates to an integrated memory device including: memory cells arranged at wordlines and bitlines, wherein the memory cells are addressable in sets of 2 n bit, wherein n is an integer, a pre-fetch read unit to pre-fetch an addressed set of 2 n data bit in parallel from the addressed memory area, buffer memory to buffer the number of pre-fetched data bits; a number m of output ports to output the data bits buffered in the buffer memory; an output controller for controlling the outputting of the data bits buffered in the buffer memory to the number m of output ports in groups of m bits in one or a plurality of successive cycles, characterized in that the number m of output ports is different to any of the possible numbers 2 n of the sets of addressable memory cells.
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公开(公告)号:DE102006031055A1
公开(公告)日:2007-02-01
申请号:DE102006031055
申请日:2006-07-05
Applicant: INFINEON TECHNOLOGIES AG
Inventor: RUCKERBAUER HERMANN , SAVIGNAC DOMINIQUE , SCHLEDZ RALF , SICHERT CHRISTIAN , FUKUZO YUKIO
Abstract: The device has a memory cell operated in a mode, in which the cell is directly operated as a memory device for error-correcting code (ECC)-information. The cell is operated in another mode, in which the cell serves as the memory device for storing information, which is different from the ECC -information. A signal control device (CTRL) is used for signaling in such a manner that the cell is operated in the former or latter mode. An independent claim is also included for a method for operating a semiconductor memory device.
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公开(公告)号:DE102005056351A1
公开(公告)日:2006-07-13
申请号:DE102005056351
申请日:2005-11-25
Applicant: INFINEON TECHNOLOGIES AG
Inventor: RUCKERBAUER HERMANN , SAVIGNAC DOMINIQUE , SICHERT CHRISTIAN
IPC: G11C11/409 , G11C7/22
Abstract: One embodiment of the present invention provides a memory device comprising a plurality of sets of memory banks, wherein each memory bank includes a memory array and is adapted to be read out in a data access; a plurality of internal data buses and a plurality of internal command and address buses connected to the plurality of sets of memory banks, respectively, such that each set of memory banks is associated with one of the internal data buses and one of the internal command and address buses; a command and address port for receiving command and address data from outside; and a command and address unit to direct the received command and address data to one of the sets of memory banks via the associated command and address bus, depending on the address data; and a data output unit for receiving data read out from one set of memory banks via the respective internal data bus in the data access and for serially outputting the received data.
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公开(公告)号:DE102004052612A1
公开(公告)日:2006-05-04
申请号:DE102004052612
申请日:2004-10-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: RUCKERBAUER HERMANN , SAVIGNAC DOMINIQUE , GREGORIUS PETER , SICHERT CHRISTIAN , WALLNER PAUL
IPC: G11C7/10 , G06F11/14 , G11C11/4093
Abstract: A semiconductor memory module includes a plurality of semiconductor memory chips. Each semiconductor memory chip includes an interface circuit that is configured to detect a transmission error in a write datum and is further configured to output, via a separate signal path, a repeat request signal for the repeated transmission of the write datum detected as erroneous. This repeat request signal can be transmitted either as a single-bit signal or as a multibit signal (e.g., serially as an individual signal line to a superordinate memory controller).
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公开(公告)号:DE102005042427A1
公开(公告)日:2006-04-13
申请号:DE102005042427
申请日:2005-09-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GREGORIUS PETER , RUCKERBAUER HERMANN , SAVIGNAC DOMINIQUE , SICHERT CHRISTIAN , WALLNER PAUL
IPC: G06F12/00
Abstract: One embodiment of the present invention provides to a memory device adapted to receive data according to a write clock signal and to output data according to a read clock signal, comprising a clock port configured to output the read clock signal and to receive the write clock signal and a serial bidirectional driver configured to output the read clock signal via the clock port and to receive the write clock signal via the clock port simultaneously.
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公开(公告)号:DE59915043D1
公开(公告)日:2009-08-06
申请号:DE59915043
申请日:1999-07-06
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SICHERT CHRISTIAN , BARTENSCHLAGER RAINER
Abstract: An integrated circuit includes a voltage regulator for generating an internal supply voltage. The voltage regulator has one input for applying an actual value and one input for applying a reference voltage as a desired value. The actual value is generated through the use of a first voltage divider from the internal supply voltage. A sensitivity of the voltage regulator is dependent on a resistance of at least one resistor element of the first voltage divider. A second voltage divider, which is connected parallel to the first voltage divider, has the same voltage divider ratio as the first voltage divider and is activatable and deactivatable by at least one switch element.
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公开(公告)号:DE102006026970A1
公开(公告)日:2007-12-13
申请号:DE102006026970
申请日:2006-06-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ROEWER FALK , SICHERT CHRISTIAN , SCHNABEL FLORIAN
IPC: G11C11/4093
Abstract: The memory has a memory layer (100) with memory cells to store data. A control circuit (40) controls a memory circuit (20) e.g. latch, in such a manner that intermediately stored data is outputted to a side or to another side of a clock signal from the memory circuit during write access and the intermediately stored data is outputted to a third side and supplied to the memory layer. The control circuit controls the memory circuit in such a manner that the data supplied from the memory layer and the data are stored in the memory circuit during read access. An independent claim is also included for a method of operating an integrated semiconductor memory.
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公开(公告)号:DE102004055046A1
公开(公告)日:2006-05-24
申请号:DE102004055046
申请日:2004-11-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor: RUCKERBAUER HERMANN , SICHERT CHRISTIAN , SAVIGNAC DOMINIQUE , GREGORIUS PETER , WALLNER PAUL
IPC: G11C7/00 , G11C11/407
Abstract: A semiconductor memory system has data transmission lines (DQ) connecting the interface circuits (1-4;5a, 5b) and via which the signal bursts of the write and read data signals of given burst lengths are transmitted from and to the memory control unit (20) and from and to the register unit (15a). The interface circuits are set up for transmission of the burst lengths at least of the write data expanded additional bits (ZB) together with at least each n-th signal burst. An independent claim is included for a method for transmission of write- read- data signals.
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公开(公告)号:DE59811858D1
公开(公告)日:2004-09-30
申请号:DE59811858
申请日:1998-06-04
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SICHERT CHRISTIAN , KAISER ROBERT , WIRTH NORBERT
IPC: H03K5/02 , H03K5/08 , H03K17/14 , H03K17/687 , H03K19/0185
Abstract: The circuit arrangement includes a device (10) for generating digital signals, with a voltage connection (8) for the supply of an external reference voltage to the device, and a voltage generator (2) for the production of an internal reference voltage which is supplied to the device over a switch (4). A level converter (6) is provided for the control of the switch, whereby a switch signal for the switching of the switch is raised on a level lying above the switching threshold of the switch. An output coupling capacitor (C1) is connected between the output of the voltage generator and a first supply voltage (VSS).
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公开(公告)号:DE59808351D1
公开(公告)日:2003-06-18
申请号:DE59808351
申请日:1998-09-21
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BARTENSCHLAGER RAINER , SCHNEIDER RALF , SICHERT CHRISTIAN , MANYOKI ZOLTAN
IPC: H03K17/12 , H03K17/16 , H03K19/003
Abstract: A circuit configuration for reducing disturbances due to a switching of an output driver. The output driver has a plurality of output driver stages and a delay element. The delay element increases the signal delay of the switch-on or switch-off signals for the output driver stages with an increasing supply voltage.
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