公开(公告)号：DE10354112A1

公开(公告)日：2005-06-30

申请号：DE10354112

申请日：2003-11-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KALLSCHEUER JOCHEN ,  SCHNEIDER HELMUT WALTER ,  RUF BERNHARD ,  SALCHNER REINHARD

IPC: G06F11/20 ,  G11C29/00 ,  H01L21/31 ,  H01L21/66 ,  H01L21/768 ,  H01L21/822 ,  H01L23/525

Abstract: A photosensitive resist is applied onto wafers (6) identified for repair. A mask (1) is built corresponding to fuse coordinates that are specific to a relevant chip and correspond to the repair. Wafers treated with the photosensitive resist are exposed to light through the mask with an exposure device (2). The fuse coordinates are entered in a control unit (9). An independent claim is also included for a system for a method for repairing memory chips.

公开(公告)号：DE10056546C1

公开(公告)日：2002-06-20

申请号：DE10056546

申请日：2000-11-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUND MICHAEL ,  SALCHNER REINHARD

IPC: G11C11/22 ,  G11C7/24

Abstract: A configuration and a method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory utilize the imprint effect for increasing the remanent polarization or remanent magnetization of a material having a hysteresis property. The remanent polarization or magnetization is increased by writing a memory content a number of times to the same memory cells.