公开(公告)号：AT514190T

公开(公告)日：2011-07-15

申请号：AT03718625

申请日：2003-03-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELPELT RUDOLF ,  MITLEHNER HEINZ ,  SCHOERNER REINHOLD

IPC: H01L29/24 ,  H01L21/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/732 ,  H01L29/739 ,  H01L29/772 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812

Abstract: The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a base doping. The current (I) in the channel region (22) can be influenced by means of at least one depletion zone (23, 24). The channel region (22) contains an n-conductive channel region (225) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region (225) is produced by ionic implantation in an epitaxial layer (262) that surrounds the channel region (22).

公开(公告)号：DE10350170B3

公开(公告)日：2005-01-27

申请号：DE10350170

申请日：2003-10-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELPELT RUDOLF ,  FRIEDRICHS PETER ,  SCHOERNER REINHOLD

IPC: H03K17/16 ,  H03K17/567 ,  H03K17/687

Abstract: A barrier layer (BL) field effect transistor (FET) (J) has a first part-load line section (PLLS) between a drain (DJ) and a source (SJ). A control FET (M) connected in series to the BL FET has a second PLLS between a drain (DM) and a source (SM). A load line section formed by both PLLS connected in series is controlled by a potential on a gate (GM) for the control FET.